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- Analysis of metallic nanoparticles embedded in thin film semiconductors for optoelectronic applicationsPublication . Fantoni, Alessandro; Fernandes, Miguel; Vygranenko, Yuri; Louro, Paula; Vieira, Manuela; Silva, R. P. O.; Teixeira, D.; Da Costa Ribeiro, Ana Paula; Prazeres, Duarte; Alegria, ElisabeteThis paper reports about a study of the local plasmonic resonance (LSPR) produced by metal nanoparticles embedded in a dielectric or semiconductor matrix. It is presented an analysis of the LSPR for different nanoparticle metals, shapes, and embedding media composition. Metals of interest for nanoparticle composition are Aluminum and Gold. Shapes of interest are nanospheres and nanotriangles. We study in this work the optical properties of metal nanoparticles diluted in water or embedded in amorphous silicon, ITO and ZnO as a function of size, aspect-ratio and metal type. Following the analysis based on the exact solution of the Mie theory and DDSCAT numerical simulations, it is presented a comparison with experimental measurements realized with arrays of metal nanospheres. Simulations are also compared with the LSPR produced by gold nanotriangles (Au NTs) that were chemically produced and characterized by microscope and optical measurements.
- Driving scheme using MIS photosensor for luminance control of AMOLED pixelPublication . Vygranenko, Yuri; Fernandes, Miguel; Sazonov, Andrei; Vieira, ManuelaThis paper presents a new driving scheme utilizing an in-pixel metal-insulator-semiconductor (MIS) photosensor for luminance control of active-matrix organic light-emitting diode (AMOLED) pixel. The proposed 3-TFT circuit is controlled by an external driver performing the signal readout, processing, and programming operations according to a luminance adjusting algorithm. To maintain the fabrication simplicity, the embedded MIS photosensor shares the same layer stack with pixel TFTs. Performance characteristics of the MIS structure with a nc-Si : H/a-Si : H bilayer absorber were measured and analyzed to prove the concept. The observed transient dark current is associated with charge trapping at the insulator-semiconductor interface that can be largely eliminated by adjusting the bias voltage during the refresh cycle. Other factors limiting the dynamic range and external quantum efficiency are also determined and verified using a small-signal model of the device. Experimental results demonstrate the feasibility of the MIS photosensor for the discussed driving scheme.
- Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodesPublication . Vygranenko, Yuri; Fathi, E.; Sazonov, A.; Vieira, Manuela; Nathan, ArokiaWe report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150 degrees C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The absorption loss of 25% at a wavelength of 400 nm was measured for the 20 nm thick films on glass and glass/ZnO:Al substrates. By employing the p(+) nc-Si:H as a window layer, complete p-i-n structures were fabricated and characterized. Low leakage current and enhanced sensitivity in the UV/blue range were achieved by incorporating an a-SiC:H buffer between the p- and i-layers.
- Photoconductivity kinetics of indium sulfofluoride thin films starPublication . Vygranenko, Yuri; Fernandes, Miguel; Vieira, Manuela; Lavareda, Guilherme; CARVALHO, CARLOS; Brogueira, Pedro; Amaral, AnaIndium sulfofluoride is an amorphous wide-gap semiconductor exhibiting high sensitivity to UV radiation. This work reports on the kinetics of photoconductivity in indium sulfofluoride thin films along with their electrical and optical properties. The films were deposited by radio-frequency plasma-enhanced reactive thermal evaporation. The film characterization includes electrical, optical, and photoconductivity measurements. The films are highly transparent in the visible-infrared range due to an indirect bandgap of 2.8 eV. The spectral response measurements have revealed existence of the band tail states. The synthesized compound is highly resistive (similar to 200 M ohm-cm at 300 K) and exhibits extremely slow photocurrent relaxations. Photoconductivity kinetics was studied under various excitation conditions. A dependence of the photocurrent on the incident photon flux was also determined.
- Laser scanned photodiodes (LSPs) for image sensingPublication . Vieira, Manuela; Fernandes, Miguel; Vygranenko, Yuri; Louro, Paula; Schwarz, R.; Schubert, M.An optimized ZnO:Al/a-pin SixC1-x:H/Al configuration for the laser scanned photodiode (LSP) imaging detector is proposed and the read-out parameters improved. The effect of the sensing element structure, cell configuration and light source flux are investigated and correlated with the sensor output characteristics. Data reveals that for sensors with wide band gap doped layers an increase on the image signal optimized to the blue is achieved with a dynamic range of two orders of magnitude, a responsivity of 6 mA W-1 and a sensitivity of 17 muW cm(-2) at 530 nm. The main output characteristics such as image responsivity, resolution, linearity and dynamic range were analyzed under reverse, forward and short circuit modes. The results show that the sensor performance can be optimized in short circuit mode. A trade-off between the scan time and the required resolution is needed since the spot size limits the resolution due to the cross-talk between dark and illuminated regions leading to blurring effects.
- Finite-difference time-domain analysis of hydrogenated amorphous silicon and aluminum surface plasmon waveguidesPublication . Lourenço, Paulo; Fantoni, Alessandro; Fernandes, Miguel; Vygranenko, Yuri; Vieira, ManuelaThe large majority of surface plasmon resonance (SPR)-based devices use noble metals, namely gold or silver, in their manufacturing process. These metals present low resistivity, which leads to low optical losses in the visible and near-infrared spectrum ranges. Gold shows high environmental stability, which is essential for long-term operation, and the lower stability of silver can be overcome through the deposition of an alumina layer, for instance. However, their high cost is a limiting factor if the intended target is large-scale manufacturing. This work considers a cost-effective approach through the selection of aluminum as the plasmonic material and hydrogenated amorphous silicon instead of its crystalline counterpart. This SPR structure relies on Fano resonance to improve its response to refractive index deviations of the surrounding environment. Fano resonance is highly sensitive to slight changes of the medium, hence the reason we incorporated this interference phenomenon in the proposed sensing structure. We report the results obtained when conducting finite-difference timedomain algorithm-based simulations on this metal–dielectric–metal structure when the active metal is aluminum, gold, and silver. Then, we evaluate their sensitivity, detection accuracy, and resolution. The obtained results for our proposed sensing structure show good linearity and similar parameter performance as the ones obtained when using gold or silver as plasmonic materials.
- Photodiode with nanocrystalline Si/amorphous Si absorber bilayerPublication . Vygranenko, Yuri; Sazonov, A.; Fernandes, Miguel; Vieira, ManuelaThis letter reports a near-ultraviolet/visible/near-infrared n(+)-n-i-delta(i)-p photodiode with an absorber comprising a nanocrystalline silicon n layer and a hydrogenated amorphous silicon i layer. Device modeling reveals that the dominant source of reverse dark current is deep defect states in the n layer, and its magnitude is controlled by the i layer thickness. The photodiode with the 900/400 nm thick n-i layers exhibits a reverse dark current density of 3nA/cm(2) at -1V. Donor concentration and diffusion length of holes in the n layer are estimated from the capacitance-voltage characteristics and from the bias dependence of long-wavelength response, respectively. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3660725]
- Photo-induced instability of nanocrystalline silicon TFTsPublication . Bauza, Marius; Ahnood, Arman; Li, Flora; Vygranenko, Yuri; Esmaeili-Rad, Mohammad R.; Chaji, G.; Sazonov, Andrei; Robertson, John; Milne, William; Nathan, ArokiaWe examine the instability behavior of nanocrystalline silicon (nc-Si) thin-film transistors (TFTs) in the presence of electrical and optical stress. The change in threshold voltage and sub-threshold slope is more significant under combined bias-and-light stress when compared to bias stress alone. The threshold voltage shift (Delta V-T) after 6 h of bias stress is about 7 times larger in the case with illumination than in the dark. Under bias stress alone, the primary instability mechanism is charge trapping at the semiconductor/insulator interface. In contrast, under combined bias-and-light stress, the prevailing mechanism appears to be the creation of defect states in the channel, and believed to take place in the amorphous phase, where the increase in the electron density induced by electrical bias enhances the non-radiative recombination of photo-excited electron-hole pairs. The results reported here are consistent with observations of photo-induced efficiency degradation in solar cells.
- Arrayed graphene enhanced surface plasmon resonance for sensing applicationsPublication . Fantoni, Alessandro; Vygranenko, Yuri; Maçarico, António; Serafinelli, Caterina; Fernandes, Miguel; Mansour, Rima; Jesus, Rui; Vieira, ManuelaCombination of carbon-based nanomaterials (CNMs) with AuNPs has been demonstrated to enhance the LSPR response and facilitate the functionalization with specific and selective antibodies. Also, the introduction of CNMs in the plasmonic layer allows tuning of the LSPR central frequency. Joining the double dependence of the LSPR on the MNPs size and the presence of CNMs, it is possible to create a set of plasmonic layers whose LSPR wavelengths are distributed in a spectral range of few tenth of nanometers. This consideration paves the way to an LSPR sensor with an arrayed structure, where each element maximizes its specific LSPR at its own wavelength. Illumination with a broad light source produces a different response in each one of the elements. The working process underlying the sensing operation is that each element of the sensor array acts like a band-stop optical filter for a specific wavelength. The output can be extracted by the application of an image analysis approach to the spatially modulated light crossing the sensor area, based on a color recognition algorithm. A change in the refractive index over the sensor array will shift the rejection band of the sensing elements. An automatized method for color recognition can support the analysis of the refractive index variations yielding the final sensor output. A figure of merit, highlighting the LSPR central wavelength and spectral extension for different LSPR configurations, is also obtained for different sizes of the AuNPs and different flavors of CNMs.
- Conducting indium oxide films on plastic substrates by plasma enhanced reactive thermal evaporationPublication . Vygranenko, Yuri; Fernandes, Miguel; Vieira, Manuela; Lavareda, Guilherme; CARVALHO, CARLOS; Brogueira, P.; Amaral, AnaThis work reports on low temperature deposition of conducing indium oxide films by a radio-frequency plasma enhanced reactive thermal evaporation (rf-PERTE) technique. The films were deposited on polyethylene terephthalate (PET) without intentional heating of the substrate and at elevated temperatures up to 150 degrees C. The material stoichiometry was accurately controlled by adjusting deposition conditions including the oxygen flow, process pressure, pumping speed, and RF-power. Besides, fine turning of the critical deposition parameters during the deposition was implemented by measuring the variation of film conductance in-situ. The film morphology was analyzed by scanning electron microscopy. Hall effect measurements were also performed to determine the relation between the deposition conditions and the electrical properties of the films. A resistivity of 4 x 10(-4) Omega-cm was reached under optimized deposition conditions. A 250 nm-thick coating with 16 Omega/sq sheet resistance shows an 82% peak value of transmittance in the visible spectral range.