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Orientador(es)
Resumo(s)
Indium sulfofluoride is an amorphous wide-gap semiconductor exhibiting high sensitivity to UV radiation. This work reports on the kinetics of photoconductivity in indium sulfofluoride thin films along with their electrical and optical properties. The films were deposited by radio-frequency plasma-enhanced reactive thermal evaporation. The film characterization includes electrical, optical, and photoconductivity measurements. The films are highly transparent in the visible-infrared range due to an indirect bandgap of 2.8 eV. The spectral response measurements have revealed existence of the band tail states. The synthesized compound is highly resistive (similar to 200 M ohm-cm at 300 K) and exhibits extremely slow photocurrent relaxations. Photoconductivity kinetics was studied under various excitation conditions. A dependence of the photocurrent on the incident photon flux was also determined.
Descrição
Este trabalho foi financiado pelo Concurso Anual para Projetos de Investigação, Desenvolvimento, Inovação e Criação Artística (IDI&CA) 2019 do Instituto Politécnico de Lisboa. Código de referência IPL/2019/BioPlas_ISEL
Palavras-chave
Indium sulfofluoride Amorphous wide-gap Photoconductivity Photocurrent Photon flux
Contexto Educativo
Citação
VYGRANENKO, Yuri; [et al] – Photoconductivity kinetics of indium sulfofluoride thin films star. European Physical Journal: Applied Physics. ISSN: 1286-0042. Vol. 89, N.º 1 (2020), pp. 1-5
Editora
EDP Sciences