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Orientador(es)
Resumo(s)
We report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150 degrees C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The absorption loss of 25% at a wavelength of 400 nm was measured for the 20 nm thick films on glass and glass/ZnO:Al substrates. By employing the p(+) nc-Si:H as a window layer, complete p-i-n structures were fabricated and characterized. Low leakage current and enhanced sensitivity in the UV/blue range were achieved by incorporating an a-SiC:H buffer between the p- and i-layers.
Descrição
Palavras-chave
Nanocrystalline silicon Conductivity PECVD Solar cell Photodiode
Contexto Educativo
Citação
VYGRANENKO, Y., [et al] – Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes. Solar Energy Materials and Solar Cells. ISSN 0927-0248. Vol. 94, N.º 11 (2010), pp. 1860-1863.
Editora
Elsevier Science BV