Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes

Vygranenko, Yuri; Fathi, E.; Sazonov, A.; Vieira, Manuela; Nathan, Arokia

http://hdl.handle.net/10400.21/1299

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Abstract(s)

We report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150 degrees C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The absorption loss of 25% at a wavelength of 400 nm was measured for the 20 nm thick films on glass and glass/ZnO:Al substrates. By employing the p(+) nc-Si:H as a window layer, complete p-i-n structures were fabricated and characterized. Low leakage current and enhanced sensitivity in the UV/blue range were achieved by incorporating an a-SiC:H buffer between the p- and i-layers.

Keywords

Nanocrystalline silicon Conductivity PECVD Solar cell Photodiode

URI

http://hdl.handle.net/10400.21/1299

Citation

VYGRANENKO, Y., [et al] – Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes. Solar Energy Materials and Solar Cells. ISSN 0927-0248. Vol. 94, N.º 11 (2010), pp. 1860-1863.