Percorrer por autor "Alves, E."
A mostrar 1 - 10 de 10
Resultados por página
Opções de ordenação
- Ageing effects on the wettability behavior of laser textured siliconPublication . Nunes, B.; Serro, A. P.; Oliveira, Vitor; Montemor, M. F.; Alves, E.; Saramago, B.; Colaço, R.In the present work we investigate the ageing of acid cleaned femtosecond laser textured < 100 > silicon surfaces. Changes in the surface structure and chemistry were analysed by Rutherford backscattering spectrometry (RBS) and X-ray photoelectron spectroscopy (XPS), in order to explain the variation with time of the water contact angles of the laser textured surfaces. It is shown that highly hydrophobic silicon surfaces are obtained immediately after laser texturing and cleaning with acid solutions (water contact angle >120 degrees). However these surfaces are not stable and ageing leads to a decrease of the water contact angle which reaches a value of 80 degrees. XPS analysis of the surfaces shows that the growth of the native oxide layer is most probably responsible for this behavior. (C) 2010 Elsevier B.V. All rights reserved.
- Blistering of W-Ta composites at different irradiation energiesPublication . Mateus, R.; Dias, M.; Lopes, J.; Rocha, J.; Catarino, N.; Duarte, P.; Gomes, R. B.; Silva, C.; Fernandes, H.; Livramento, V.; Carvalho, P. A.; Alves, E.; Hanada, K.; Correia, J. B.Pure tungsten and tantalum plates and tungsten-tantalum composites produced via mechanical alloying and spark plasma sintering were bombarded with He+ and D+ energetic ion beams and deuterium plasmas. The aim of this experiment is to study the effects caused by individual helium and deuterium exposures and to evidence that the modifications induced in the composites at different irradiation energies could be followed by irradiating the pristine constituent elements under the same experimental conditions, which is relevant considering the development of tailored composites for fusion applications. Higher D retentions, especially in tungsten, and superficial blistering are observed in both components after helium exposure. The blistering is magnified in the tantalum phase of composites due to its higher ductility and to water vapour production under deuterium irradiation. At lower irradiation energies the induced effects are minor. After plasma exposure, the presence of tantalum does not increase the D content in the composites. (C) 2013 Elsevier B.V. All rights reserved.
- Electrical, optical and photoconductive properties of Sn-doped indium sulfofluoride thin filmsPublication . Vygranenko, Yuri; Fernandes, M.; Vieira, Manuela; Lavareda, G.; Carvalho, C. Nunes De; Brogueira, P.; Amaral, A.; Barradas, N. P.; Alves, E.This work reports on undoped and Sn-doped indium sulfofluoride thin-films deposited by radio-frequency plasma-enhanced reactive thermal evaporation. The deposition was performed evaporating pure indium or indium-tin alloy in SF6 plasma at substrate temperatures ranging from 373 to 423 K. Rutherford backscattering analysis and secondary-ion mass spectrometry were used to determine the chemical composition of the films. The film characterization includes electrical, optical, and photoconductivity measurements. The resistivity of undoped material varies in a wide range of 1 G Omega-cm to 2 T Omega-cm depending on deposition conditions. Sn doping leads to a decrease in the resistance down to 8 M Omega-cm. The films are highly transparent in the visible-infrared region due to an indirect bandgap of 2.7-3 eV. Moreover, the doped material is highly photosensitive in the blue -UV region. Photoconductivity kinetics under various excitation conditions was also studied. The synthesized material is a promising candidate for a buffer layer in chalcogenide-based solar cells.
- Formation of oriented nickel aggregates in rutile single crystals by Ni implantationPublication . Cruz, M. M.; Silva, R. C. da; Pinto, J. V.; Borges, R. P.; Franco, N.; Casaca, A.; Alves, E.; Godinho, M.The magnetic and electrical properties of Ni implanted single crystalline TiO2 rutile were studied for nominal implanted fluences between 0.5 x 10(17) cm(-2) and 2.0 x 10(17) cm(-2) with 150 keV energy, corresponding to maximum atomic concentrations between 9 at% and 27 at% at 65 nm depth, in order to study the formation of metallic oriented aggregates. The results indicate that the as implanted crystals exhibit superparamagnetic behavior for the two higher fluences, which is attributed to the formation of nanosized nickel clusters with an average size related with the implanted concentration, while only paramagnetic behavior is observed for the lowest fluence. Annealing at 1073 K induces the aggregation of the implanted nickel and enhances the magnetization in all samples. The associated anisotropic behavior indicates preferred orientations of the nickel aggregates in the rutile lattice consistent with Rutherford backscattering spectrometry-channelling results. Electrical conductivity displays anisotropic behavior but no magnetoresistive effects were detected. (C) 2013 Elsevier B.V. All rights reserved.
- Helium and deuterium irradiation effects in tungsten-based materials with titaniumPublication . Catarino, Norberto; Dias, Marta; Lopes, Jose; Jepu, Ionut; Alves, E.Pure Tungsten (W) will be used as plasma facing component in fusion devices due to its high melting point, good thermal conductivity and low sputtering yield. However, its structural application as plasma facing component (PFC) is still restricted by its low fracture toughness associated with the high ductile to brittle transition temperature (DBTT). In the present study tungsten titanium (W-Ti) samples were produced by Ti implantation at room temperature and 500 °C with a constant fluence of 2 × 1021 at/m2 and an energy of 100 keV. In order to understand the fundamental mechanisms which govern the behavior of defect dynamics in tungsten under reactor conditions, W-Ti materials were implanted at room temperature with 10 keV of He+ with a constant fluence of 5 × 1021 at/m2 and 5 keV of D+ with fluences in the range of 0.1 × 1021–5 × 1021 at/m2. Surface structure and morphology changes were investigated by scanning electron microscopy and X-ray diffraction. Rutherford backscattering spectrometry, nuclear reaction analysis and thermal desorption spectroscopy methods were used to provide information about the distribution of Ti, He and D on W. No changes in the microstructure were observed after Ti implantation in the W plates. NRA analysis showed that D retention in the W-Ti samples is higher after sequential He and D implantation when compared with single D implantation. The diffractogram of W-Ti samples implanted with He evidence a broadening of the W peaks. This effect is believed to be associated with the high volume fraction of the bubbles that may cause internal stress fields inducing extended defects like dislocations which distort the crystal lattice.
- Laser-induced diffusion decomposition in Fe-V thin-film alloysPublication . Polushkin, N. I.; Duarte, A. C.; Conde, O.; Alves, E.; Barradas, N. P.; García-García, A.; Kakazei, G. N.; Ventura, J. O.; Araújo, J. P.; Oliveira, Vitor; Vilar, R.We investigate the origin of ferromagnetism induced in thin-film (similar to 20 nm) Fe-V alloys by their irradiation with subpicosecond laser pulses. We find with Rutherford backscattering that the magnetic modifications follow a thermally stimulated process of diffusion decomposition, with formation of a-few-nm-thick Fe enriched layer inside the film. Surprisingly, similar transformations in the samples were also found after their long-time (similar to 10(3) s) thermal annealing. However, the laser action provides much higher diffusion coefficients (similar to 4 orders of magnitude) than those obtained under standard heat treatments. We get a hint that this ultrafast diffusion decomposition occurs in the metallic glassy state achievable in laser-quenched samples. This vitrification is thought to be a prerequisite for the laser-induced onset of ferromagnetism that we observe. 2014 Elsevier B.V. All rights reserved.
- Mass spectrometry improvement on an high current ion implanterPublication . Lopes, J. Gabriel; Alegria, F. C.; Luis Redondo; Rocha, J.; Alves, E.The development of accurate mass spectrometry, enabling the identification of all the ions extracted from the ion source in a high current implanter is described. The spectrometry system uses two signals (x-y graphic), one proportional to the magnetic field (x-axes), taken from the high-voltage potential with an optic fiber system, and the other proportional to the beam current intensity (y-axes), taken from a beam-stop. The ion beam mass register in a mass spectrum of all the elements magnetically analyzed with the same radius and defined by a pair of analyzing slits as a function of their beam intensity is presented. The developed system uses a PC to control the displaying of the extracted beam mass spectrum, and also recording of all data acquired for posterior analysis. The operator uses a LabView code that enables the interfacing between an I/O board and the ion implanter. The experimental results from an ion implantation experiment are shown. (C) 2011 Elsevier B.V. All rights reserved.
- Optical and photoconductive properties of indium sulfide fluoride thin filmsPublication . Vygranenko, Yuri; Vieira, Manuela; Lavareda, G.; Carvalho, C. Nunes de; Brogueira, Pedro; Amaral, A.; Pessoa Barradas, Nuno; Alves, E.This work reports on transparent semiconducting indium sulfide fluoride (ISF) thin-films exhibiting high sensitivity to ultraviolet radiation. The films were deposited on fused silica and silicon substrates using a radiofrequency plasma-enhanced reactive thermal evaporation system. The deposition was performed evaporating pure indium in SF6 plasma at a substrate temperature of 423 K. Rutherford backscattering measurements were used to determine the chemical composition of the films deposited on silicon substrates. The surface morphology was studied using scanning electron microscopy technique. The film characterization includes electrical, optical, and photoconductivity measurements. The synthesized compound is highly-resistive (similar to 700 M Omega-cm at 300 K) and exhibits an evident semiconducting behavior. The activation energy of 0.88 eV is deduced from the temperature dependence of electrical resistivity. The indirect band energy gap of 2.8 eV is determined from transmittance spectra of the ISF films. The photoconductivity band is centered at 345 nm wavelength. The photoconductivity spectrum also shows the Urbach tail with a characteristic energy of 166 meV. ISF is a promising candidate for a buffer layer in chalcogenide-based solar cells.
- Structural and optical studies of Au doped titanium oxide filmsPublication . Alves, E.; Franco, N.; Barradas, N. P.; Nunes, B.; Lopes, J.; Cavaleiro, A.; Torrell, M.; Cunha, L.; Vaz, F.Thin films of TiO2 were doped with Au by ion implantation and in situ during the deposition. The films were grown by reactive magnetron sputtering and deposited in silicon and glass substrates at a temperature around 150 degrees C. The undoped films were implanted with Au fiuences in the range of 5 x 10(15) Au/cm(2)-1 x 10(17) Au/cm(2) with a energy of 150 keV. At a fluence of 5 x 10(16) Au/cm(2) the formation of Au nanoclusters in the films is observed during the implantation at room temperature. The clustering process starts to occur during the implantation where XRD estimates the presence of 3-5 nm precipitates. After annealing in a reducing atmosphere, the small precipitates coalesce into larger ones following an Ostwald ripening mechanism. In situ XRD studies reveal that Au atoms start to coalesce at 350 degrees C, reaching the precipitates dimensions larger than 40 nm at 600 degrees C. Annealing above 700 degrees C promotes drastic changes in the Au profile of in situ doped films with the formation of two Au rich regions at the interface and surface respectively. The optical properties reveal the presence of a broad band centered at 550 nm related to the plasmon resonance of gold particles visible in AFM maps. (C) 2011 Elsevier B.V. All rights reserved.
- The effects of mechanical alloying on the physical and thermal properties of CuCrFeTiV alloyPublication . Antão, F.; Dias, Marta; Correia, J. B.; Galatanu, Andrei; Galatanu, M.; Mardolcar, U. V.; Myakush, A.; Cruz, Maria Margarida; Casaca, António; da Silva, R. C.; Alves, E.The present work reports the production and key properties of the CuCrFeTiV high entropy alloy synthetized mechanical alloying and spark plasma sintering. The milled powders and the as-sintered samples were analysed through scanning electron microscopy, coupled with energy dispersive X-ray spectroscopy and particle induced X-ray emission. Magnetic properties together with electrical resistivity, thermal conductivity, specific heat differential thermal analysis were also evaluated on the consolidated samples. The powders reveal an increasing content in iron as the millings are prolonged up to 20 h. The elemental composition of the sintered alloy, determined through particle induced X-ray emission, confirms the final composition after mechanical alloying with an increase of iron and a decrease in the remaining elements. Furthermore, although the alloy presents electrical resistivity typical of a high entropy alloy, a ferromagnetic behaviour was found, consistently with major Fe content as detected in prior observations. Finally, thermal measurements show that this CuCrFeTiV entropy alloy possesses thermal properties suitable for its potential use as thermal barriers.