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Advisor(s)
Abstract(s)
It is presented in this paper a study on the photo-electronic properties of multi layer a-Si: H/a-SiC: H p-i-n-i-p structures. This study is aimed to give an insight into the internal electrical characteristics of such a structure in thermal equilibrium, under applied Was and under different illumination condition. Taking advantage of this insight it is possible to establish a relation among-the electrical behavior of the structure the structure geometry (i.e. thickness of the light absorbing intrinsic layers and of the internal n-layer) and the composition of the layers (i.e. optical bandgap controlled through percentage of carbon dilution in the a-Si1-xCx: H layers).
Showing an optical gain for low incident light power controllable by means of externally applied bias or structure composition, these structures are quite attractive for photo-sensing device applications, like color sensors and large area color image detector.
An analysis based on numerical ASCA simulations is presented for describing the behavior of different configurations of the device and compared with experimental measurements (spectral response and current-voltage characteristic). (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Description
Keywords
Laser scanned photodiode Sensor
Citation
FANTONI, Alessandro; [et al] – Analysis and simulation of a-Si Ha-SiC HPINIP structures for color image detection. Physica Status Solidi A-Applications and Materials Science. ISSN 1862-6300. Vol. 205, N.º 8 (2008), pp. 2069-2074.
Publisher
Wiley-V H Verlag GMBH