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Analysis and simulation of a-Si Ha-SiC HPINIP structures for color image detection

2008-07-21Conference object Restricted access
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dc.contributor.authorFantoni, Alessandro
dc.contributor.authorFernandes, Miguel
dc.contributor.authorVygranenko, Yuri
dc.contributor.authorVieira, Manuela
dc.date.accessioned2013-11-28T16:36:30Z
dc.date.available2013-11-28T16:36:30Z
dc.date.issued2008-07-21
dc.description.abstractIt is presented in this paper a study on the photo-electronic properties of multi layer a-Si: H/a-SiC: H p-i-n-i-p structures. This study is aimed to give an insight into the internal electrical characteristics of such a structure in thermal equilibrium, under applied Was and under different illumination condition. Taking advantage of this insight it is possible to establish a relation among-the electrical behavior of the structure the structure geometry (i.e. thickness of the light absorbing intrinsic layers and of the internal n-layer) and the composition of the layers (i.e. optical bandgap controlled through percentage of carbon dilution in the a-Si1-xCx: H layers). Showing an optical gain for low incident light power controllable by means of externally applied bias or structure composition, these structures are quite attractive for photo-sensing device applications, like color sensors and large area color image detector. An analysis based on numerical ASCA simulations is presented for describing the behavior of different configurations of the device and compared with experimental measurements (spectral response and current-voltage characteristic). (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.por
dc.identifier.citationFANTONI, Alessandro; [et al] – Analysis and simulation of a-Si Ha-SiC HPINIP structures for color image detection. Physica Status Solidi A-Applications and Materials Science. ISSN 1862-6300. Vol. 205, N.º 8 (2008), pp. 2069-2074.por
dc.identifier.doi10.1002/pssa.200778931
dc.identifier.issn1862-6300
dc.identifier.other10.1002/pssa.200778931
dc.identifier.urihttp://hdl.handle.net/10400.21/2965
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherWiley-V H Verlag GMBHpor
dc.relation.publisherversionhttp://onlinelibrary.wiley.com/doi/10.1002/pssa.200778931/pdfpor
dc.subjectLaser scanned photodiodepor
dc.subjectSensorpor
dc.titleAnalysis and simulation of a-Si Ha-SiC HPINIP structures for color image detectionpor
dc.typeconference object
dspace.entity.typePublication
oaire.citation.conferencePlaceWeinheimpor
oaire.citation.endPage2074por
oaire.citation.issue8por
oaire.citation.startPage2069por
oaire.citation.titlePhysica Status Solidi A-Applications and Materials Sciencepor
oaire.citation.volume205por
person.familyNameFantoni
person.familyNameFernandes
person.familyNameVygranenko
person.familyNameVieira
person.givenNameAlessandro
person.givenNameMiguel
person.givenNameYuri
person.givenNameManuela
person.identifier10792
person.identifier.ciencia-id241E-E87C-552F
person.identifier.ciencia-idDD1B-859F-EB0B
person.identifier.ciencia-id121C-05B4-3897
person.identifier.ciencia-id9516-E25E-BB8E
person.identifier.orcid0000-0002-9938-0351
person.identifier.orcid0000-0002-0765-474X
person.identifier.orcid0000-0002-1819-5606
person.identifier.orcid0000-0002-1150-9895
person.identifier.ridK-1105-2016
person.identifier.ridV-7860-2017
person.identifier.scopus-author-id7006535604
person.identifier.scopus-author-id24450183800
person.identifier.scopus-author-id6701808217
person.identifier.scopus-author-id7202140173
rcaap.rightsrestrictedAccesspor
rcaap.typeconferenceObjectpor
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relation.isAuthorOfPublication6a72ab08-83fa-4225-be0e-b827f206a82e
relation.isAuthorOfPublication5471872c-b778-4218-9ac1-677868dd7d43
relation.isAuthorOfPublicationb77c6785-9cfb-4cd4-90b5-c2b816bd7d11
relation.isAuthorOfPublication.latestForDiscoveryb77c6785-9cfb-4cd4-90b5-c2b816bd7d11

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