Browsing by Author "Vygranenko, Yuri"
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- Amorphous silicon photovoltaic modules on flexible plastic substratesPublication . Vygranenko, Yuri; Fernandes, Miguel; Louro, Paula; Vieira, Manuela; Khosropour, Alireza; Yang, Ruifeng; Sazonov, AndreiThis paper reports on a monolithic 10 cm x 10 cm area PV module integrating an array of 72 a-Si:H n-i-p cells on a 100 mu m thick polyethylene-naphtalate substrate. The n-i-p stack is deposited using a PECVD system at 150 degrees C substrate temperature. The design optimization and device performance analysis are performed using a two-dimensional distributed circuit model of the photovoltaic cell. The circuit simulator SPICE is used to calculate current and potential distributions in a network of sub-cell circuits, and also to map Joule losses in the front TCO electrode and the metal grid. Experimental results show that the shunt leakage is one of the factors reducing the device performance. Current-voltage characteristics of individual a-Si: H p-i-n cells were analyzed to estimate a variation of shunt resistances. Using the LBIC technique, the presence of multiple shunts in the n-i-p cell was detected. To understand the nature of electrical shunts, the change in the surface roughness of all device layers was analyzed throughout fabrication process. It is found that surface defects in plastic foils, which are thermally induced during the device fabrication, form microscopic pinholes filled with highly conductive top electrode material.
- An indium-oxide electrode with discontinuous Au layers for plasmonic devicesPublication . Vygranenko, Yuri; Lavareda, G.; André, V.; Brogueira, Pedro; Amaral, A.; Fernandes, M.; Fantoni, Alessandro; Vieira, ManuelaIn this contribution we report on a low cost plasmonic electrode for light-sensing applications. The electrode combines a conducting nonstoichiometric indium oxide (InOx) layer with an ultrathin (~5 nm) discontinuous Au layer. The InOx and Au layers were deposited on glass substrates by plasma enhanced reactive thermal evaporation and thermal evaporation, respectively. Several device configurations with one or two Au layer(s) sandwiched between InOx layers were fabricated and characterized. The morphological and structural properties of both Au and InOx layers were analyzed using AFM and XRD techniques. In particular, the effect of thermal annealing (673 K, 15 min) on the surface morphology of Au layers grown on bare glass and InOx-coated substrate was investigated. It has been also found that the oxide film grown above an underlying nanostructured Au layer is amorphous, while a reference InOx film on glass is nanocrystalline with a smooth surface. The electrical properties of InOx grown on the Au surface are worsened due to Au-induced structural disorder. The observed difference in transmission spectra of the glass/InOx/Au and glass/Au/InOx structures indicates the difference in the morphology of the metal layer. Thus, the optical and morphological properties of the InOx electrode can be varied in a wide range by incorporating several Au layers.
- Analysis and simulation of a-Si Ha-SiC HPINIP structures for color image detectionPublication . Fantoni, Alessandro; Fernandes, Miguel; Vygranenko, Yuri; Vieira, ManuelaIt is presented in this paper a study on the photo-electronic properties of multi layer a-Si: H/a-SiC: H p-i-n-i-p structures. This study is aimed to give an insight into the internal electrical characteristics of such a structure in thermal equilibrium, under applied Was and under different illumination condition. Taking advantage of this insight it is possible to establish a relation among-the electrical behavior of the structure the structure geometry (i.e. thickness of the light absorbing intrinsic layers and of the internal n-layer) and the composition of the layers (i.e. optical bandgap controlled through percentage of carbon dilution in the a-Si1-xCx: H layers). Showing an optical gain for low incident light power controllable by means of externally applied bias or structure composition, these structures are quite attractive for photo-sensing device applications, like color sensors and large area color image detector. An analysis based on numerical ASCA simulations is presented for describing the behavior of different configurations of the device and compared with experimental measurements (spectral response and current-voltage characteristic). (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
- Analysis of metallic nanoparticles embedded in thin film semiconductors for optoelectronic applicationsPublication . Fantoni, Alessandro; Fernandes, Miguel; Vygranenko, Yuri; Louro, Paula; Vieira, Manuela; Silva, R. P. O.; Teixeira, D.; Da Costa Ribeiro, Ana Paula; Prazeres, Duarte; Alegria, ElisabeteThis paper reports about a study of the local plasmonic resonance (LSPR) produced by metal nanoparticles embedded in a dielectric or semiconductor matrix. It is presented an analysis of the LSPR for different nanoparticle metals, shapes, and embedding media composition. Metals of interest for nanoparticle composition are Aluminum and Gold. Shapes of interest are nanospheres and nanotriangles. We study in this work the optical properties of metal nanoparticles diluted in water or embedded in amorphous silicon, ITO and ZnO as a function of size, aspect-ratio and metal type. Following the analysis based on the exact solution of the Mie theory and DDSCAT numerical simulations, it is presented a comparison with experimental measurements realized with arrays of metal nanospheres. Simulations are also compared with the LSPR produced by gold nanotriangles (Au NTs) that were chemically produced and characterized by microscope and optical measurements.
- Arrayed graphene enhanced surface plasmon resonance for sensing applicationsPublication . Fantoni, Alessandro; Vygranenko, Yuri; Maçarico, António; Serafinelli, Caterina; Fernandes, Miguel; Mansour, Rima; Jesus, Rui; Vieira, ManuelaCombination of carbon-based nanomaterials (CNMs) with AuNPs has been demonstrated to enhance the LSPR response and facilitate the functionalization with specific and selective antibodies. Also, the introduction of CNMs in the plasmonic layer allows tuning of the LSPR central frequency. Joining the double dependence of the LSPR on the MNPs size and the presence of CNMs, it is possible to create a set of plasmonic layers whose LSPR wavelengths are distributed in a spectral range of few tenth of nanometers. This consideration paves the way to an LSPR sensor with an arrayed structure, where each element maximizes its specific LSPR at its own wavelength. Illumination with a broad light source produces a different response in each one of the elements. The working process underlying the sensing operation is that each element of the sensor array acts like a band-stop optical filter for a specific wavelength. The output can be extracted by the application of an image analysis approach to the spatially modulated light crossing the sensor area, based on a color recognition algorithm. A change in the refractive index over the sensor array will shift the rejection band of the sensing elements. An automatized method for color recognition can support the analysis of the refractive index variations yielding the final sensor output. A figure of merit, highlighting the LSPR central wavelength and spectral extension for different LSPR configurations, is also obtained for different sizes of the AuNPs and different flavors of CNMs.
- Bias-dependent photocurrent collection in p-i-n a-Si : H/SiC : H heterojunctionPublication . Louro, Paula; Vieira, Manuela; Vygranenko, Yuri; Fernandes, Miguel; Schwarz, R.; Schubert, M.A series of large area single layers and glass/ZnO:AVp(SixC1-x:H)/i(Si:H)/n(SixC1-x:H)/AI (0 < x < 1) heterojunction cells were produced by plasma-enhanced chemical vapour deposition (PE-CVD) at low temperature. Junction properties, carrier transport and photogeneration are investigated from dark and illuminated current-voltage (J-V) and capacitance-voltage (C-V) characteristics. For the heterojunction cells atypical J-V characteristics under different illumination conditions are observed leading to poor fill factors. High series resistances around 106 Q are also measured. These experimental results were used as a basis for the numerical simulation of the energy band diagram, and the electrical field distribution of the structures. Further comparison with the sensor performance gave satisfactory agreement. Results show that the conduction band offset is the most limiting parameter for the optimal collection of the photogenerated carriers. As the optical gap increases and the conductivity of the doped layers decreases, the transport mechanism changes from a drift to a diffusion-limited process.
- Blue-enhanced thin-film photodiode for dual-screen x-ray imagingPublication . Vygranenko, Yuri; Sazonov, A.; Heiler, G.; Tredwell, T.; Vieira, Manuela; Nathan, ArokiaThis article reports on a-Si:H-based low-leakage blue-enhanced photodiodes for dual-screen x-ray imaging detectors. Doped nanocrystalline silicon was incorporated in both the n- and p-type regions to reduce absorption losses for light incoming from the top and bottom screens. The photodiode exhibits a dark current density of 900 pA/cm(2) and an external quantum efficiency up to 90% at a reverse bias of 5 V. In the case of illumination through the tailored p-layer, the quantum efficiency of 60% at a 400 nm wavelength is almost double that for the conventional a-Si:H n-i-p photodiode.
- Boron-doped nanocrystalline silicon thin films for solar cellsPublication . Fathi, E.; Vygranenko, Yuri; Vieira, Manuela; Sazonov, A.This article reports on the structural, electronic, and optical properties of boron-doped hydrogenated nanocrystalline silicon (nc-Si: H) thin films. The films were deposited by plasma-enhanced chemical vapour deposition (PECVD) at a substrate temperature of 150 degrees C. Crystalline volume fraction and dark conductivity of the films were determined as a function of trimethylboron-to-silane flow ratio. Optical constants of doped and undoped nc-Si: H were obtained from transmission and reflection spectra. By employing p(+) nc-Si: H as a window layer combined with a p' a-SiC buffer layer, a-Si: H-based p-p'-i-n solar cells on ZnO:Al-coated glass substrates were fabricated. Device characteristics were obtained from current-voltage and spectral-response measurements. (C) 2011 Elsevier B. V. All rights reserved.
- Characterization of a-Si:H solar cell modules on plastic substrates by high resolution LBIC techniquePublication . Fernandes, Miguel; Vygranenko, Yuri; Vieira, Manuela; Sazonov, Andrei; Yang, R.; Khosropour, A.This article reports on characterization of hydrogenated amorphous silicon (a-Si:H) photovoltaic modules fabricated on 100 mu m thick PEN plastic films. Experimental results show that the shunt leakage is one of the factors reducing the device performance. Current-voltage characteristics of individual a-Si:H p-i-n cells were analysed to estimate a variation of shunt resistances. A SPICE model of the a-Si:H p-i-n cell with local shunt leakage was also developed to analyse the impact of leakage currents on the device performance. Using the LBIC technique, the presence of multiple shunts in the cell was detected. They are attributed to surface defects in plastic foils, which are thermally induced during the device fabrication. (C) 2015 Published by Elsevier Ltd.
- Colour and image processing for output extraction of a LSPR sensorPublication . Mansour, Rima; Stojkovic, Vladan; Vygranenko, Yuri; Lourenço, Paulo; Jesus, Rui; Fantoni, AlessandroSensors based on the Local Surface plasmon Resonance (LSPR) are attractive due to their simple structure and good sensitivity, but the expensive optoelectronic part of the device is limiting the practical applications. There is a need for new strategies to bring the excellent detection properties of LSPR sensors to the playground of low-cost devices and materials. In this work, it is proposed a novel approach to the output extraction of from LSPR sensor whose sensing element is composed by metal nanoparticles (MNPs). Illuminated with an incident broad light source, the sensor produces a spectral transmission output where the MNPs act like a band-stop optical filter for a specific wavelength. An alteration of the refractive index in the surrounding medium corresponds directly to a shift of the filtering rejection band, which corresponds to a slight change in the colour of the light transmitted by the sensor elements. This colour change can be captured by a CMOS photo-camera, used as an image sensor. It is proposed in this paper an approach based on an automatized image processing algorithm for colour change detection, yielding to a system capable of detecting refractive index variations, avoiding the use of expensive spectrometers. The algorithm comprises three stages: (1) Region of interest detection: images are first cropped using the Otsu threshold binary image to remove the uninteresting areas in the image. (2) Image segmentation: using the watershed algorithm, the sensor elements (sample) area is detected automatically in the cropped image. The segmentation is done using the gradient image, where the watershed markers are the regions of low gradient and barriers are the areas of high values inside the image. (3) The resulted sample region is then processed to find its average or dominant LAB colour and then compare it to its corresponding sample image immersed in different mediums using the colour difference measurement CIEDE2000.