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Orientador(es)
Resumo(s)
This article reports on a-Si:H-based low-leakage blue-enhanced photodiodes for dual-screen x-ray imaging detectors. Doped nanocrystalline silicon was incorporated in both the n- and p-type regions to reduce absorption losses for light incoming from the top and bottom screens. The photodiode exhibits a dark current density of 900 pA/cm(2) and an external quantum efficiency up to 90% at a reverse bias of 5 V. In the case of illumination through the tailored p-layer, the quantum efficiency of 60% at a 400 nm wavelength is almost double that for the conventional a-Si:H n-i-p photodiode.
Descrição
Palavras-chave
Current density p-i-n photodiodes Thin films X-ray imaging
Contexto Educativo
Citação
VYGRANENKO, Y.; [et al] – Blue-enhanced thin-film photodiode for dual-screen x-ray imaging. Applied Physics Letters. ISSN 0003-6951. Vol. 95, N.º 26 (2009), pp. 1-3.
Editora
American Institute of Physics