Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.21/1354
Título: Sensor element for a metal-insulator-semiconductor camera system (MISCam)
Autor: Schwarz, R.
Fernandes, Miguel
Martins, J.
Fantoni, Alessandro
Vieira, Maria Manuela Almeida Carvalho
Sanguino, P.
Carvalho, C. N.
Muschik, T.
Palavras-chave: MIS detector
Image sensor
C-V curve
Spectral response
Data: 21-Set-2004
Editora: Elsevier Science SA
Citação: Schwarz R, Fernandes M, Martins J, Fantoni A, Vieira M, Sanguino P, Carvalho C N, Muschik T.Sensor element for a metal-insulator-semiconductor camera system (MISCam). Sensors and Actuators A-Physical. 2004; 115 (2-3): 331-335.
Relatório da Série N.º: 115
Resumo: We discuss the operation of a new type of optical sensor (MISCam) based on a metal-insulator-semiconductor (MIS) structure. The operation principle relies on light-induced changes of the band bending and barrier height at the interface between semiconductor and insulator. An image is obtained from the quenching of the ac signal in analogy to the principle of the laser-scanned photodiode (LSP). Lateral resolution depends on the semiconductor material chosen. We have characterised the MIS structures by C-V, I-V, and spectral response measurements testing different types of insulators like a-Si3N4, SiO2, and AlN. The presence of slow interface charges allows for image memory. Colour sensors can be realised by controlling sign and magnitude of the electric fields in the base and the interface region.
Peer review: yes
URI: http://hdl.handle.net/10400.21/1354
ISSN: 0924-4247
Aparece nas colecções:ISEL - Eng. Elect. Tel. Comp. - Artigos

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