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Orientador(es)
Resumo(s)
We discuss the operation of a new type of optical sensor (MISCam) based on a metal-insulator-semiconductor (MIS) structure. The operation principle relies on light-induced changes of the band bending and barrier height at the interface between semiconductor and insulator. An image is obtained from the quenching of the ac signal in analogy to the principle of the laser-scanned photodiode (LSP). Lateral resolution depends on the semiconductor material chosen. We have characterised the MIS structures by C-V, I-V, and spectral response measurements testing different types of insulators like a-Si3N4, SiO2, and AlN. The presence of slow interface charges allows for image memory. Colour sensors can be realised by controlling sign and magnitude of the electric fields in the base and the interface region.
Descrição
Palavras-chave
MIS detector Image sensor C-V curve Spectral response
Contexto Educativo
Citação
SCHWARZ, R.; [et al] – Sensor element for a metal-insulator-semiconductor camera system (MISCam). Sensors and Actuators A: Physical. ISSN 0924-4247. Vol. 115, N.º 2-3 (2004), pp. 331-335.
Editora
Elsevier Science SA