Phototransistor with nanocrystalline Si/amorphous Si bilayer channel

Vygranenko, Yuri; Nathan, Arokia; Vieira, Manuela; Sazonov, Andrei

http://hdl.handle.net/10400.21/700

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Abstract(s)

We report a field-effect phototransistor with a channel comprising a thin nanocrystalline silicon transport layer and a thicker hydrogenated amorphous silicon absorption layer. The semiconductor and dielectric layers were deposited by radio-frequency plasma enhanced chemical vapor deposition. The phototransistor with channel length of 24 microns and photosensitive area of 1.4 mm(2) shows an off-current of about 1 pA, and high photoconductive gain in the subthreshold region. Measurements of the quantum efficiency at different incident light intensities and biasing conditions, along with spectral-response characteristics, and threshold voltage stability characterization demonstrate the feasibility of the phototransistor for low light level detection.

Keywords

Amorphous semiconductors Elemental semiconductors Field effect transistors Hydrogen Multilayers Nanostructured materials Photoconductivity Phototransistors Plasma CVD Silicon Thin film transistors

URI

http://hdl.handle.net/10400.21/700

Citation

VYGRANENKO, Y.; [et al] – Phototransistor with nanocrystalline Si/amorphous Si bilayer channel. Applied Physics Letters. ISSN 0003-6951. Vol. 96, N.º 17 (2010), pp. 1-3.