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Orientador(es)
Resumo(s)
We report a field-effect phototransistor with a channel comprising a thin nanocrystalline silicon transport layer and a thicker hydrogenated amorphous silicon absorption layer. The semiconductor and dielectric layers were deposited by radio-frequency plasma enhanced chemical vapor deposition. The phototransistor with channel length of 24 microns and photosensitive area of 1.4 mm(2) shows an off-current of about 1 pA, and high photoconductive gain in the subthreshold region. Measurements of the quantum efficiency at different incident light intensities and biasing conditions, along with spectral-response characteristics, and threshold voltage stability characterization demonstrate the feasibility of the phototransistor for low light level detection.
Descrição
Palavras-chave
Amorphous semiconductors Elemental semiconductors Field effect transistors Hydrogen Multilayers Nanostructured materials Photoconductivity Phototransistors Plasma CVD Silicon Thin film transistors
Contexto Educativo
Citação
VYGRANENKO, Y.; [et al] – Phototransistor with nanocrystalline Si/amorphous Si bilayer channel. Applied Physics Letters. ISSN 0003-6951. Vol. 96, N.º 17 (2010), pp. 1-3.
Editora
Amer Inst Physics