Publication
Phototransistor with nanocrystalline Si/amorphous Si bilayer channel
| dc.contributor.author | Vygranenko, Yuri | |
| dc.contributor.author | Nathan, Arokia | |
| dc.contributor.author | Vieira, Manuela | |
| dc.contributor.author | Sazonov, Andrei | |
| dc.date.accessioned | 2011-11-28T19:06:35Z | |
| dc.date.available | 2011-11-28T19:06:35Z | |
| dc.date.issued | 2010-04-26 | |
| dc.description.abstract | We report a field-effect phototransistor with a channel comprising a thin nanocrystalline silicon transport layer and a thicker hydrogenated amorphous silicon absorption layer. The semiconductor and dielectric layers were deposited by radio-frequency plasma enhanced chemical vapor deposition. The phototransistor with channel length of 24 microns and photosensitive area of 1.4 mm(2) shows an off-current of about 1 pA, and high photoconductive gain in the subthreshold region. Measurements of the quantum efficiency at different incident light intensities and biasing conditions, along with spectral-response characteristics, and threshold voltage stability characterization demonstrate the feasibility of the phototransistor for low light level detection. | por |
| dc.identifier.citation | VYGRANENKO, Y.; [et al] – Phototransistor with nanocrystalline Si/amorphous Si bilayer channel. Applied Physics Letters. ISSN 0003-6951. Vol. 96, N.º 17 (2010), pp. 1-3. | por |
| dc.identifier.doi | 10.1063/1.3422479 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.uri | http://hdl.handle.net/10400.21/700 | |
| dc.language.iso | eng | por |
| dc.peerreviewed | yes | por |
| dc.publisher | Amer Inst Physics | por |
| dc.subject | Amorphous semiconductors | por |
| dc.subject | Elemental semiconductors | por |
| dc.subject | Field effect transistors | por |
| dc.subject | Hydrogen | por |
| dc.subject | Multilayers | por |
| dc.subject | Nanostructured materials | por |
| dc.subject | Photoconductivity | por |
| dc.subject | Phototransistors | por |
| dc.subject | Plasma CVD | por |
| dc.subject | Silicon | por |
| dc.subject | Thin film transistors | por |
| dc.title | Phototransistor with nanocrystalline Si/amorphous Si bilayer channel | por |
| dc.type | journal article | |
| dspace.entity.type | Publication | |
| oaire.citation.conferencePlace | Melville | por |
| oaire.citation.issue | 17 | por |
| oaire.citation.title | Applied Physics Letters | por |
| oaire.citation.volume | 96 | |
| person.familyName | Vygranenko | |
| person.familyName | Nathan | |
| person.familyName | Vieira | |
| person.givenName | Yuri | |
| person.givenName | Arokia | |
| person.givenName | Manuela | |
| person.identifier | 10792 | |
| person.identifier.ciencia-id | 121C-05B4-3897 | |
| person.identifier.ciencia-id | 9516-E25E-BB8E | |
| person.identifier.orcid | 0000-0002-1819-5606 | |
| person.identifier.orcid | 0000-0002-2070-8853 | |
| person.identifier.orcid | 0000-0002-1150-9895 | |
| person.identifier.rid | V-7860-2017 | |
| person.identifier.scopus-author-id | 6701808217 | |
| person.identifier.scopus-author-id | 7202140173 | |
| rcaap.rights | restrictedAccess | por |
| rcaap.type | article | por |
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| relation.isAuthorOfPublication.latestForDiscovery | 5471872c-b778-4218-9ac1-677868dd7d43 |