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- The effects of mechanical alloying on the physical and thermal properties of CuCrFeTiV alloyPublication . Antão, F.; Dias, Marta; Correia, J. B.; Galatanu, Andrei; Galatanu, M.; Mardolcar, U. V.; Myakush, A.; Cruz, Maria Margarida; Casaca, António; da Silva, R. C.; Alves, E.The present work reports the production and key properties of the CuCrFeTiV high entropy alloy synthetized mechanical alloying and spark plasma sintering. The milled powders and the as-sintered samples were analysed through scanning electron microscopy, coupled with energy dispersive X-ray spectroscopy and particle induced X-ray emission. Magnetic properties together with electrical resistivity, thermal conductivity, specific heat differential thermal analysis were also evaluated on the consolidated samples. The powders reveal an increasing content in iron as the millings are prolonged up to 20 h. The elemental composition of the sintered alloy, determined through particle induced X-ray emission, confirms the final composition after mechanical alloying with an increase of iron and a decrease in the remaining elements. Furthermore, although the alloy presents electrical resistivity typical of a high entropy alloy, a ferromagnetic behaviour was found, consistently with major Fe content as detected in prior observations. Finally, thermal measurements show that this CuCrFeTiV entropy alloy possesses thermal properties suitable for its potential use as thermal barriers.
- Helium and deuterium irradiation effects in tungsten-based materials with titaniumPublication . Catarino, Norberto; Dias, Marta; Lopes, Jose; Jepu, Ionut; Alves, E.Pure Tungsten (W) will be used as plasma facing component in fusion devices due to its high melting point, good thermal conductivity and low sputtering yield. However, its structural application as plasma facing component (PFC) is still restricted by its low fracture toughness associated with the high ductile to brittle transition temperature (DBTT). In the present study tungsten titanium (W-Ti) samples were produced by Ti implantation at room temperature and 500 °C with a constant fluence of 2 × 1021 at/m2 and an energy of 100 keV. In order to understand the fundamental mechanisms which govern the behavior of defect dynamics in tungsten under reactor conditions, W-Ti materials were implanted at room temperature with 10 keV of He+ with a constant fluence of 5 × 1021 at/m2 and 5 keV of D+ with fluences in the range of 0.1 × 1021–5 × 1021 at/m2. Surface structure and morphology changes were investigated by scanning electron microscopy and X-ray diffraction. Rutherford backscattering spectrometry, nuclear reaction analysis and thermal desorption spectroscopy methods were used to provide information about the distribution of Ti, He and D on W. No changes in the microstructure were observed after Ti implantation in the W plates. NRA analysis showed that D retention in the W-Ti samples is higher after sequential He and D implantation when compared with single D implantation. The diffractogram of W-Ti samples implanted with He evidence a broadening of the W peaks. This effect is believed to be associated with the high volume fraction of the bubbles that may cause internal stress fields inducing extended defects like dislocations which distort the crystal lattice.
- Optical and photoconductive properties of indium sulfide fluoride thin filmsPublication . Vygranenko, Yuri; Vieira, Manuela; Lavareda, G.; Carvalho, C. Nunes de; Brogueira, Pedro; Amaral, A.; Pessoa Barradas, Nuno; Alves, E.This work reports on transparent semiconducting indium sulfide fluoride (ISF) thin-films exhibiting high sensitivity to ultraviolet radiation. The films were deposited on fused silica and silicon substrates using a radiofrequency plasma-enhanced reactive thermal evaporation system. The deposition was performed evaporating pure indium in SF6 plasma at a substrate temperature of 423 K. Rutherford backscattering measurements were used to determine the chemical composition of the films deposited on silicon substrates. The surface morphology was studied using scanning electron microscopy technique. The film characterization includes electrical, optical, and photoconductivity measurements. The synthesized compound is highly-resistive (similar to 700 M Omega-cm at 300 K) and exhibits an evident semiconducting behavior. The activation energy of 0.88 eV is deduced from the temperature dependence of electrical resistivity. The indirect band energy gap of 2.8 eV is determined from transmittance spectra of the ISF films. The photoconductivity band is centered at 345 nm wavelength. The photoconductivity spectrum also shows the Urbach tail with a characteristic energy of 166 meV. ISF is a promising candidate for a buffer layer in chalcogenide-based solar cells.
- Electrical, optical and photoconductive properties of Sn-doped indium sulfofluoride thin filmsPublication . Vygranenko, Yuri; Fernandes, M.; Vieira, Manuela; Lavareda, G.; Carvalho, C. Nunes De; Brogueira, P.; Amaral, A.; Barradas, N. P.; Alves, E.This work reports on undoped and Sn-doped indium sulfofluoride thin-films deposited by radio-frequency plasma-enhanced reactive thermal evaporation. The deposition was performed evaporating pure indium or indium-tin alloy in SF6 plasma at substrate temperatures ranging from 373 to 423 K. Rutherford backscattering analysis and secondary-ion mass spectrometry were used to determine the chemical composition of the films. The film characterization includes electrical, optical, and photoconductivity measurements. The resistivity of undoped material varies in a wide range of 1 G Omega-cm to 2 T Omega-cm depending on deposition conditions. Sn doping leads to a decrease in the resistance down to 8 M Omega-cm. The films are highly transparent in the visible-infrared region due to an indirect bandgap of 2.7-3 eV. Moreover, the doped material is highly photosensitive in the blue -UV region. Photoconductivity kinetics under various excitation conditions was also studied. The synthesized material is a promising candidate for a buffer layer in chalcogenide-based solar cells.