Browsing by Author "Barnes, M. J."
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- Future circular collider injection and extraction kicker topologies and solid state generatorsPublication . Barnes, M. J.; Bartmann, W.; Burkart, F.; Ducimetiere, L.; Goddard, B.; Kramer, T.; Senaj, V.; Stadlbauer, T.; Woog, D.; Barna, D.; Redondo, Luis; Kandratsyeu, A.A 100 TeV center-of-mass energy frontier proton collider, in a new tunnel of 80-100 km circumference, is a central part of CERN's Future Circular Colliders (FCC) design study. The designs of the injection and extraction systems of the FCC are initially based upon the parameters of the injection and extraction systems of the Large Hadron Collider and a preliminary study of the FCC beam optics and lattice. The injection and, in particular, the extraction systems of the FCC have to be highly reliable. In order to achieve high reliability, solid state switches will be used for the generators of the injection and extraction systems. This paper discusses topologies of these kicker systems, which are presently under consideration.
- Marx generator prototype for kicker magnets based on SiC MOSFETsPublication . Luis Redondo; Kandratsyeu, A.; Barnes, M. J.This paper describes the design strategy for a new Marx generator, based on SiC metal-oxide-semiconductor field-effect transistors (MOSFETs), proposed for Kicker magnet applications. As a starting point, the possible replacement of a thyratron tube associated with an existing kicker system, at CERN, is considered. The specifications of the output pulse are: 40-kV, 3.2-kA, 3-μs flat top duration, 30-ns rise- and fall-time, and 1-Hz repetition rate. A theoretical study for a Marx generator topology, using 50 stages, each 800-V stage comprising 24 SiC MOSFETs in parallel, each MOSFET conducting approximately 140-A pulses is considered. In addition, a four-stage prototype has been evaluated, with almost full current and 3 kV, based on the proposed design, in order to assess the technological advantages of such a system and limitations for the scale up. First tests using parallel SiC MOSFETs are described and results discussed in light of the proposed topology and the physical structure of the assembly.