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Orientador(es)
Resumo(s)
This paper describes the design strategy for a new Marx generator, based on SiC metal-oxide-semiconductor field-effect transistors (MOSFETs), proposed for Kicker magnet applications. As a starting point, the possible replacement of a thyratron tube associated with an existing kicker system, at CERN, is considered. The specifications of the output pulse are: 40-kV, 3.2-kA, 3-μs flat top duration, 30-ns rise- and fall-time, and 1-Hz repetition rate. A theoretical study for a Marx generator topology, using 50 stages, each 800-V stage comprising 24 SiC MOSFETs in parallel, each MOSFET conducting approximately 140-A pulses is considered. In addition, a four-stage prototype has been evaluated, with almost full current and 3 kV, based on the proposed design, in order to assess the technological advantages of such a system and limitations for the scale up. First tests using parallel SiC MOSFETs are described and results discussed in light of the proposed topology and the physical structure of the assembly.
Descrição
Palavras-chave
MOSFET Generators Electron tubes Silicon carbide Rectifiers Voltage measurement Current measurement
Contexto Educativo
Citação
REDONDO, L. M.; KANDRATSYEU, A; BARNES, M. J. – Marx generator prototype for kicker magnets based on SiC MOSFETs. IEEE Transactions on Plasma Science. ISSN 0093-3813. Vol. PP, N.º 99, (2018), pp. 1-6.
Editora
Institute of Electrical and Electronics Engineers