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Marx-Type solid-state bipolar modulator topologies: Performance comparison

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Abstract(s)

The operation of generalized Marx-type solid-state bipolar modulators is discussed and compared with simplified Marx-derived circuits, to evaluate their capability to deal with various load conditions. A comparative analysis on the number of switches per cell, fiber optic trigger count, losses, and switch hold-off voltages has been made. A circuit topology is obtained as a compromise in terms of operating performance, trigger simplicity, and switching losses. A five-stage laboratory prototype of this circuit has been assembled using 1200 V insulated gate bipolar transistors (IGBTs) and diodes, operating with 1000 V dc input voltage and 1 kHz frequency, giving 5 kV bipolar pulses, with 2.5 mu s pulse width and 5 mu s relaxation time into resistive, capacitive, and inductive loads.

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High-Voltage (HV) Techniques Marx Generators Power Semiconductor Devices Pulsed Power Systems

Citation

CANACSINH, H.; REDONDO, L. M.; SILVA, J. F. – Marx-Type solid-state bipolar modulator topologies: Performance comparison. IEEE Transactions on Plasma Science. ISSN: 0093-3813. Vol. 40, nr. 10 (2012), pp. 2603-2610

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IEEE-INST Electrical Electronics Engineers Inc

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