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Marx-Type solid-state bipolar modulator topologies: Performance comparison

2012-10Journal article Restricted access
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dc.contributor.authorCanacsinh, Hiren
dc.contributor.authorLuis Redondo
dc.contributor.authorSilva, José Fernando
dc.date.accessioned2015-09-11T08:55:11Z
dc.date.available2015-09-11T08:55:11Z
dc.date.issued2012-10
dc.description.abstractThe operation of generalized Marx-type solid-state bipolar modulators is discussed and compared with simplified Marx-derived circuits, to evaluate their capability to deal with various load conditions. A comparative analysis on the number of switches per cell, fiber optic trigger count, losses, and switch hold-off voltages has been made. A circuit topology is obtained as a compromise in terms of operating performance, trigger simplicity, and switching losses. A five-stage laboratory prototype of this circuit has been assembled using 1200 V insulated gate bipolar transistors (IGBTs) and diodes, operating with 1000 V dc input voltage and 1 kHz frequency, giving 5 kV bipolar pulses, with 2.5 mu s pulse width and 5 mu s relaxation time into resistive, capacitive, and inductive loads.por
dc.identifier.citationCANACSINH, H.; REDONDO, L. M.; SILVA, J. F. – Marx-Type solid-state bipolar modulator topologies: Performance comparison. IEEE Transactions on Plasma Science. ISSN: 0093-3813. Vol. 40, nr. 10 (2012), pp. 2603-2610por
dc.identifier.issn0093-3813
dc.identifier.urihttp://hdl.handle.net/10400.21/5171
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherIEEE-INST Electrical Electronics Engineers Incpor
dc.relationQREN - Portuguese National Strategic Reference Framework - 1600/A2P2/2008
dc.relationFCT - Portuguese Technological and Science Foundation - CERN/FP/111670/2010
dc.subjectHigh-Voltage (HV) Techniquespor
dc.subjectMarx Generatorspor
dc.subjectPower Semiconductor Devicespor
dc.subjectPulsed Power Systemspor
dc.titleMarx-Type solid-state bipolar modulator topologies: Performance comparisonpor
dc.typejournal article
dspace.entity.typePublication
oaire.citation.conferencePlacePiscataway
oaire.citation.endPage2610por
oaire.citation.issue10por
oaire.citation.startPage2603por
oaire.citation.titleIEEE Transactions on Plasma Sciencepor
oaire.citation.volume40por
person.familyNameCanacsinh
person.familyNameRedondo
person.givenNameHiren
person.givenNameLuis
person.identifier1017796
person.identifier1017419
person.identifier.ciencia-id1E13-A798-9EA2
person.identifier.ciencia-id5E13-9730-4651
person.identifier.orcid0000-0002-7531-5459
person.identifier.orcid0000-0002-2381-4627
person.identifier.ridA-3078-2009
person.identifier.scopus-author-id7003990641
rcaap.rightsclosedAccesspor
rcaap.typearticlepor
relation.isAuthorOfPublication3e5019e7-e744-49ad-ba1c-7facbb93935d
relation.isAuthorOfPublication1d3e3435-66c8-4d32-8ffc-d5798a8533a4
relation.isAuthorOfPublication.latestForDiscovery1d3e3435-66c8-4d32-8ffc-d5798a8533a4

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