Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.21/1759
Título: Influence of growth temperature and carrier flux on the structure and transport properties of highly oriented CrO2 on Al2O3 (0001)
Autor: Sousa, Pedro M.
Dias, Sonia A.
Conde, Olinda
Silvestre, A. J.
Branford, William R.
Morris, Benjamin
Yates, Karen A.
Cohen, Lesley F.
Palavras-chave: CrO2
Spin Polarization
Transport Properties
Half-Metallic Ferromagnet
Pulsed-Laser Deposition
Oxide Thin-Films
Spin Polarization
Data: Out-2007
Editora: Wiley-Blackwell
Citação: Sousa Pedro M, Dias Sonia A, Conde Olinda, Silvestre A J, Branford William R, Morris Benjamin, Yates Karen A, Cohen Lesley F. Influence of growth temperature and carrier flux on the structure and transport properties of highly oriented CrO2 on Al2O3 (0001). Chemical Vapor Deposition. 2007: 13 (10), 537-545.
Resumo: In this work we report on the structure and magnetic and electrical transport properties of CrO2 films deposited onto (0001) sapphire by atmospheric pressure (AP)CVD from a CrO3 precursor. Films are grown within a broad range of deposition temperatures, from 320 to 410 degrees C, and oxygen carrier gas flow rates of 50-500 seem, showing that it is viable to grow highly oriented a-axis CrO2 films at temperatures as low as 330 degrees C i.e., 60-70 degrees C lower than is reported in published data for the same chemical system. Depending on the experimental conditions, growth kinetic regimes dominated either by surface reaction or by mass-transport mechanisms are identified. The growth of a Cr2O3 interfacial layer as an intrinsic feature of the deposition process is studied and discussed. Films synthesized at 330 degrees C keep the same high quality magnetic and transport properties as those deposited at higher temperatures.
Peer review: yes
URI: http://hdl.handle.net/10400.21/1759
ISSN: 0948-1907
Aparece nas colecções:ISEL - Física - Artigos

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