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Influence of growth temperature and carrier flux on the structure and transport properties of highly oriented CrO2 on Al2O3 (0001)

2007-10Journal article Open access
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dc.contributor.authorSousa, Pedro M.
dc.contributor.authorDias, Sonia A.
dc.contributor.authorConde, Olinda
dc.contributor.authorSilvestre, António Jorge
dc.contributor.authorBranford, William R.
dc.contributor.authorMorris, Benjamin
dc.contributor.authorYates, Karen
dc.contributor.authorCohen, Lesley F.
dc.date.accessioned2012-09-10T16:17:16Z
dc.date.available2012-09-10T16:17:16Z
dc.date.issued2007-10
dc.description.abstractIn this work we report on the structure and magnetic and electrical transport properties of CrO2 films deposited onto (0001) sapphire by atmospheric pressure (AP)CVD from a CrO3 precursor. Films are grown within a broad range of deposition temperatures, from 320 to 410 degrees C, and oxygen carrier gas flow rates of 50-500 seem, showing that it is viable to grow highly oriented a-axis CrO2 films at temperatures as low as 330 degrees C i.e., 60-70 degrees C lower than is reported in published data for the same chemical system. Depending on the experimental conditions, growth kinetic regimes dominated either by surface reaction or by mass-transport mechanisms are identified. The growth of a Cr2O3 interfacial layer as an intrinsic feature of the deposition process is studied and discussed. Films synthesized at 330 degrees C keep the same high quality magnetic and transport properties as those deposited at higher temperatures.por
dc.identifier.citationSousa Pedro M, Dias Sonia A, Conde Olinda, Silvestre A J, Branford William R, Morris Benjamin, Yates Karen A, Cohen Lesley F. Influence of growth temperature and carrier flux on the structure and transport properties of highly oriented CrO2 on Al2O3 (0001). Chemical Vapor Deposition. ISSN‎: ‎0948-1907. 2007: 13 (10), 537-545.por
dc.identifier.issn0948-1907
dc.identifier.urihttp://hdl.handle.net/10400.21/1759
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherWiley-Blackwellpor
dc.subjectCrO2por
dc.subjectFerromagnetismpor
dc.subjectSpin Polarizationpor
dc.subjectTransport Propertiespor
dc.subjectXRDpor
dc.subjectChemical-Vapor-Depositionpor
dc.subjectHalf-Metallic Ferromagnetpor
dc.subjectPulsed-Laser Depositionpor
dc.subjectOxide Thin-Filmspor
dc.subjectChromium-Oxidepor
dc.subjectEpitaxial-Growthpor
dc.subjectMagnetic-Propertiespor
dc.subjectSpin Polarizationpor
dc.subjectPoint-Contactpor
dc.subjectMagnetoresistancepor
dc.titleInfluence of growth temperature and carrier flux on the structure and transport properties of highly oriented CrO2 on Al2O3 (0001)por
dc.typejournal article
dspace.entity.typePublication
oaire.citation.conferencePlaceMaldenpor
oaire.citation.endPage545por
oaire.citation.issue10por
oaire.citation.startPage537por
oaire.citation.titleChemical Vapor Depositionpor
oaire.citation.volume13por
person.familyNameConde
person.familyNameSilvestre
person.familyNameYates
person.givenNameOlinda
person.givenNameAntónio Jorge
person.givenNameKaren
person.identifier.ciencia-idB114-FD5F-2C7B
person.identifier.orcid0000-0003-0413-1967
person.identifier.orcid0000-0001-6517-6275
person.identifier.orcid0000-0002-1368-5227
person.identifier.ridA-2321-2011
person.identifier.ridM-6004-2015
person.identifier.scopus-author-id7005302308
person.identifier.scopus-author-id25224208600
person.identifier.scopus-author-id54388342800
rcaap.rightsrestrictedAccesspor
rcaap.typearticlepor
relation.isAuthorOfPublication3ef22430-3b22-45fa-ad31-e13284b38d8f
relation.isAuthorOfPublicationda27d795-d2eb-4f8c-bfa5-7053ef20f339
relation.isAuthorOfPublication37759108-cebd-44e8-bb9b-4135f6b4b976
relation.isAuthorOfPublication.latestForDiscovery3ef22430-3b22-45fa-ad31-e13284b38d8f

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