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Capacitive effects in pinpin photodiodes

dc.contributor.authorFantoni, Alessandro
dc.contributor.authorFernandes, Miguel
dc.contributor.authorLouro, Paula
dc.contributor.authorVieira, Manuel Augusto
dc.contributor.authorVieira, Manuela
dc.date.accessioned2013-11-01T19:04:07Z
dc.date.available2013-11-01T19:04:07Z
dc.date.issued2013-08
dc.description.abstractThe application of a-SiC:H/a-Si:H pinpin photodiodes for optoelectronic applications as a WDM demultiplexer device has been demonstrated useful in optical communications that use the WDM technique to encode multiple signals in the visible light range. This is required in short range optical communication applications, where for costs reasons the link is provided by Plastic Optical Fibers. Characterization of these devices has shown the presence of large photocapacitive effects. By superimposing background illumination to the pulsed channel the device behaves as a filter, producing signal attenuation, or as an amplifier, producing signal gain, depending on the channel/background wavelength combination. We present here results, obtained by numerical simulations, about the internal electric configuration of a-SiC:H/a-Si:H pinpin photodiode. These results address the explanation of the device functioning in the frequency domain to a wavelength tunable photo-capacitance due to the accumulation of space charge localized at the bottom diode that, according to the Shockley-Read-Hall model, it is mainly due to defect trapping. Experimental result about measurement of the photodiode capacitance under different conditions of illumination and applied bias will be also presented. The combination of these analyses permits the description of a wavelength controlled photo-capacitance that combined with the series and parallel resistance of the diodes may result in the explicit definition of cut off frequencies for frequency capacitive filters activated by the light background or an oscillatory resonance of photogenerated carriers between the two diodes. (C) 2013 Elsevier B.V. All rights reserved.por
dc.identifier.citationFANTONI, A.; [et al] – Capacitive effects in pinpin photodiodes. Microelectronic Engineering. ISSN 0167-9317. Vol. 108 (2013), pp. 195-199.por
dc.identifier.doi10.1016/j.mee.2013.01.035
dc.identifier.issn0167-9317
dc.identifier.urihttp://hdl.handle.net/10400.21/2843
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherElsevier Science BVpor
dc.subjectAmorphous siliconpor
dc.subjectPhotodiodepor
dc.subjectPhotocapacitancepor
dc.titleCapacitive effects in pinpin photodiodespor
dc.typejournal article
dspace.entity.typePublication
oaire.citation.conferencePlaceAmsterdampor
oaire.citation.endPage199por
oaire.citation.startPage195por
oaire.citation.titleMicroelectronic Engineeringpor
oaire.citation.volume108por
person.familyNameFantoni
person.familyNameFernandes
person.familyNameLouro
person.familyNameAugusto Vieira
person.familyNameVieira
person.givenNameAlessandro
person.givenNameMiguel
person.givenNamePaula
person.givenNameManuel
person.givenNameManuela
person.identifier499161
person.identifierI-8527-2018
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person.identifier.ciencia-idE511-8C08-E606
person.identifier.ciencia-idA511-1330-549F
person.identifier.ciencia-id9516-E25E-BB8E
person.identifier.orcid0000-0002-9938-0351
person.identifier.orcid0000-0002-0765-474X
person.identifier.orcid0000-0002-4167-2052
person.identifier.orcid0000-0003-1385-3646
person.identifier.orcid0000-0002-1150-9895
person.identifier.ridK-1105-2016
person.identifier.ridU-8346-2017
person.identifier.ridV-7860-2017
person.identifier.scopus-author-id7006535604
person.identifier.scopus-author-id24450183800
person.identifier.scopus-author-id8845716400
person.identifier.scopus-author-id5719 1567905
person.identifier.scopus-author-id7202140173
rcaap.rightsrestrictedAccesspor
rcaap.typearticlepor
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