| Name: | Description: | Size: | Format: | |
|---|---|---|---|---|
| 329.8 KB | Adobe PDF |
Advisor(s)
Abstract(s)
This paper presents an analysis of the material quality influence for amorphous silicon waveguides for microphotonic applications. Material quality is taken into account by a model based on the absorption coefficient data obtained by Constant Photocurrent Measurement (CPM) in the near infrared region. The GUTL (Gauss-Urbach-Tauc-Lorentz) model has been presented as an extension of the standard Urbach-Tauc-Lorentz model and proposed as a predictor for the wavelength dependent optical constants of amorphous silicon in the near infrared spectra. Values produced for the GUTL model have been used as input for a set of FDTD simulations, taking in consideration different material qualities and waveguide dimensions directed to study the characteristics of amorphous silicon waveguides embedded in a SiO2 cladding.
Description
Este trabalho foi financiado pelo Concurso Anual para Projetos de Investigação, Desenvolvimento, Inovação e Criação Artística (IDI&CA) 2016 do Instituto Politécnico de Lisboa. Código de referência IPL/2016/EXOWAVE_ISEL
Keywords
Amorphous silicon Waveguides Constant Photocurrent Measurement (CPM) GUTL (Gauss-Urbach-Tauc-Lorentz)
Citation
FANTONI, Alessandro; LOURENÇO, P.; VIEIRA, Manuela – A model for the refractive index of amorphous silicon for FDTD simulation of photonics waveguides. In 17th International Conference on Numerical Simulation of Optoelectronic Devices NUSOD. Copenhagen, Denmark: IEEE, 2017. ISBN 978-1-5090-5323-0. Pp. 167-168
Publisher
Institute of Electrical and Electronics Engineers