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Optical properties and transport in PLD-GaN

dc.contributor.authorNiehus, Manfred
dc.contributor.authorSanguino, P.
dc.contributor.authorMonteiro, T.
dc.contributor.authorSoares, M. J.
dc.contributor.authorPereira, E.
dc.contributor.authorVieira, Manuela
dc.contributor.authorKoynov, S.
dc.contributor.authorSchwarz, R.
dc.date.accessioned2012-03-23T12:42:18Z
dc.date.available2012-03-23T12:42:18Z
dc.date.issued2003-03
dc.description.abstractWe present structural, optical and transport data on GaN samples grown by hybrid, two-step low temperature pulsed laser deposition. The band gap of samples with good crystallinity has been deduced from optical spectra. Large below gap band tails were observed. In samples with the lowest crystalline quality the PL spectra are quite dependent on spot laser incidence. The most intense PL lines can be attributed to excitons bounded to stacking faults. When the crystalline quality of the samples is increased the ubiquitous yellow emission band can be detected following a quenching process described by a similar activation energy to that one found in MOCVD grown samples. The samples with the highest quality present, besides the yellow band, show a large near band edge emission which peaked at 3.47 eV and could be observed up to room temperature. The large width of the NBE is attributed to effect of a wide distribution of band tail states on the excitons. Photoconductivity data supports this interpretation.por
dc.identifier.citationNIEHUS, M.; [et al] – Optical properties and transport in PLD-GaN. Solid-State Electronics. ISSN 0038-1101. Vol. 47, N.º 3 (2003), pp. 569-573.por
dc.identifier.doi10.1016/S0038-1101(02)00415-X
dc.identifier.issn0038-1101
dc.identifier.urihttp://hdl.handle.net/10400.21/1353
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherPergamon-Elsevier Science LTDpor
dc.subjectOptical propertiespor
dc.subjectPLD-GaNpor
dc.titleOptical properties and transport in PLD-GaNpor
dc.typejournal article
dspace.entity.typePublication
oaire.citation.conferencePlaceOxfordpor
oaire.citation.endPage573por
oaire.citation.issue3por
oaire.citation.startPage569por
oaire.citation.titleSolid-State Electronicspor
oaire.citation.volume47
person.familyNameNiehus
person.familyNameVieira
person.givenNameManfred
person.givenNameManuela
person.identifier10792
person.identifier.ciencia-id7710-9CEC-5CF3
person.identifier.ciencia-id9516-E25E-BB8E
person.identifier.orcid0000-0002-0344-5115
person.identifier.orcid0000-0002-1150-9895
person.identifier.ridA-3318-2012
person.identifier.ridV-7860-2017
person.identifier.scopus-author-id6601980850
person.identifier.scopus-author-id7202140173
rcaap.rightsrestrictedAccesspor
rcaap.typearticlepor
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relation.isAuthorOfPublicationb77c6785-9cfb-4cd4-90b5-c2b816bd7d11
relation.isAuthorOfPublication.latestForDiscoveryb77c6785-9cfb-4cd4-90b5-c2b816bd7d11

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