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Laser-scanned p-i-n photodiode (LSP) for image detection

2001-08Journal article Restricted access
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dc.contributor.authorVieira, Manuela
dc.contributor.authorFernandes, Miguel
dc.contributor.authorMartins, João
dc.contributor.authorLouro, Paula
dc.contributor.authorMaçarico, António Filipe Ruas Trindade
dc.contributor.authorSchwarz, Reinhard
dc.contributor.authorSchubert, Markus B.
dc.date.accessioned2021-12-15T15:00:35Z
dc.date.available2021-12-15T15:00:35Z
dc.date.issued2001-08
dc.description.abstractAmorphous and microcrystalline glass/ZnO:Al/p(a-Si:H)/i(a-Si:H)/n(a-Si1 C :H)/Al imagers with different n-layer resistivities were produced by plasma-enhanced chemical vapor deposition technique (PE-CVD). The transducer is a simple, large area p-i-n photodiode; an image projected onto the sensing element leads to spatially confined depletion regions that can be readout by scanning the photodiode with a low-power modulated laser beam. The essence of the scheme is the analog readout and the absence of semiconductor arrays or electrode potential manipulations to transfer the information coming from the transducer. The effect of the image intensity on the sensor output characteristics (sensitivity, linearity, blooming, resolution, and signal-tonoise ratio) are analyzed for different material composition. The results show that the responsivity and the spatial resolution are limited by the conductivity of the doped layers. An enhancement of one order of magnitude in the image intensity and on the spatial resolution is achieved with a responsivity of 0.2 mW/cm2 by decreasing the -layer conductivity by the same amount. In a 4 4 cm2 laser-scanned photodiode (LSP) sensor, the resolution was less than 100 m and the signal-to-noise (S/N) ratio was about 32 dB. Aphysical model supported by electrical simulation gives insight into the methodology used for image representation.pt_PT
dc.description.versioninfo:eu-repo/semantics/publishedVersionpt_PT
dc.identifier.citationVIEIRA, M.; [et al] – Laser scanned photodiodes (LSP) for image sensing. IEEE Sensors Journal. ISSN 1530-437X. Vol. 1, N.º 2 (2001), pp. 158-167.pt_PT
dc.identifier.issn1530-437X
dc.identifier.urihttp://hdl.handle.net/10400.21/14053
dc.language.isoengpt_PT
dc.peerreviewedyespt_PT
dc.publisherIEEEpt_PT
dc.subjecta/ c-Si:H p-i-n devicespt_PT
dc.subjectAnalog readoutpt_PT
dc.subjectImage acquisition and representationpt_PT
dc.subjectLaser-scanner photodiode (LSP)pt_PT
dc.subjectOptical sensorspt_PT
dc.subjectSolid-state transducerpt_PT
dc.titleLaser-scanned p-i-n photodiode (LSP) for image detectionpt_PT
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage167pt_PT
oaire.citation.issue2pt_PT
oaire.citation.startPage158pt_PT
oaire.citation.titleIEEE Sensors Journalpt_PT
oaire.citation.volume1pt_PT
person.familyNameVieira
person.familyNameFernandes
person.familyNameLouro
person.familyNameRuas da Trindade Maçarico
person.givenNameManuela
person.givenNameMiguel
person.givenNamePaula
person.givenNameAntónio Filipe
person.identifier10792
person.identifier499161
person.identifier.ciencia-id9516-E25E-BB8E
person.identifier.ciencia-idDD1B-859F-EB0B
person.identifier.ciencia-idE511-8C08-E606
person.identifier.ciencia-idE018-BC2E-29CD
person.identifier.orcid0000-0002-1150-9895
person.identifier.orcid0000-0002-0765-474X
person.identifier.orcid0000-0002-4167-2052
person.identifier.orcid0000-0001-6213-925X
person.identifier.ridV-7860-2017
person.identifier.ridU-8346-2017
person.identifier.scopus-author-id7202140173
person.identifier.scopus-author-id24450183800
person.identifier.scopus-author-id8845716400
rcaap.rightsclosedAccesspt_PT
rcaap.typearticlept_PT
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relation.isAuthorOfPublication6a72ab08-83fa-4225-be0e-b827f206a82e
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relation.isAuthorOfPublication.latestForDiscovery07f6df58-ced5-4c88-b0de-03b9e8bef00e

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