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- Silicon waveguides analysis and simulationPublication . Lourenço, Paulo Jorge Passos Sério; Fantoni, Alessandro; Pinho, PedroElectromagnetic phenomena have been studied since their prediction by Maxwell in the 19th century. Their propagation, whether in open space or through specifically created conduits, is of no exception and, lately, research interest seems very much focused on Si based photonics. Its high refraction index and compatibility with CMOS actual technology, place this element on a favourable position as a high density integration platform in digital processing systems today’s manufacturing processes. Thus, it is the intent of this dissertation to present the first necessary steps towards the ultimate goal, a fully optical computer system. Hence and after an initial introduction where the main foreseen advantages by the replacement of some of today’s electrical interconnects on computer systems by their Si based optical counterparts are mentioned, follows an analytical approach to propagation modes formation and respective main parameters on dielectric waveguides and, finally, by some of these structures simulations in order to obtain data to characterize optical power loss along the simulated devices. For that purpose, it is reported results obtained by a set of FDTD (Finite-Difference Time-Domain) simulations, both 2D and 3D, about the characteristics of hydrogenated amorphous silicon waveguides embedded in a SiO2 cladding. Light absorption dependence on the material properties and waveguide curvature radius are analysed for wavelengths in the IR (infra-red) spectrum. Wavelength transmission efficiency is determined analysing the decay of the light power along the waveguides and the obtained results show that radiation losses should remain within acceptable limits when considering curvature radius as small as 3 μm at its most.