Browsing by Issue Date, starting with "2004-09"
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- KrF pulsed laser deposition of chromium oxide thin films from Cr8O21 targetsPublication . Popovici, N.; Parames, M. L.; Da Silva, R. C.; Monnereau, O.; Sousa, P. M.; Silvestre, António Jorge; Conde, O.Chromium oxides, CrxOy, are of great interest due to the wide variety of their technological applications. Among them, CrO2 has been extensively investigated in recent years because it is an attractive compound for use in spintronic heterostructures. However, its synthesis at low temperatures has been a difficult task due to the metastable nature of this oxide. This is indeed essential to ensure interface quality and the ability to coat thermal-sensitive materials such as those envisaged in spintronic devices. Pulsed Laser Deposition (PLD) is a technique that has the potential to meet the requirements stated above. In this work, we describe our efforts to grow chromium oxide thin films by PLD from Cr8O21 targets, using a KrF excimer laser. The as-deposited films were investigated by X-ray diffraction and Rutherford backscattering spectrometry. Structural and chemical composition studies showed that the films consist of a mixture of amorphous chromium oxides exhibiting different stoichiometries depending on the processing parameters, where nanocrystals of mainly Cr2O3 are dispersed. The analyses do not exclude the possibility of co-deposition of Cr2O3 and a low fraction of CrO2.
- Capillary bridging and long-range attractive forces in a mean-field approachPublication . Andrienko, D.; Patricio, Pedro; Vinogradova, O. I.When a mixture is confined, one of the phases can condense out. This condensate, which is otherwise metastable in the bulk, is stabilized by the presence of surfaces. In a sphere-plane geometry, routinely used in atomic force microscope and surface force apparatus, it, can form a bridge connecting the surfaces. The pressure drop in the bridge gives rise to additional long-range attractive forces between them. By minimizing the free energy of a binary mixture we obtain the force-distance curves as well as the structural phase diagram of the configuration with the bridge. Numerical results predict a discontinuous transition between the states with and without the bridge and linear force-distance curves with hysteresis. We also show that similar phenomenon can be observed in a number of different systems, e.g., liquid crystals and polymer mixtures. (C). 2004 American Institute of Physics.
- Optical confinement and colour separation in a double colour laser scanned photodiode (D/CLSP)Publication . Vieira, Manuela; Fernandes, Miguel; Louro, Paula; Fantoni, Alessandro; Rodrigues, Isabel Maria CabritaLarge area n-i-p-n-i-p a-SiC:H heterostructures are used as sensing element in a double colour laser scanned photodiode image sensor (D/CLSP). This work aims to clarify possible improvements, physical limits and performance of CLSP image sensor when used as non-pixel image reader. Here, the image capture device and the scanning reader are optimized and the effects of the sensor structure on the output characteristics discussed. The role of the design of the sensing element, the doped layer composition and thickness, the read-out parameters (applied voltage and scanner frequency) on the image acquisition and the colour detection process are analysed. A physical model is presented and supported by a numerical simulation of the output characteristics of the sensor.
- Sensor element for a metal-insulator-semiconductor camera system (MISCam)Publication . Schwarz, R.; Fernandes, Miguel; Martins, J.; Fantoni, Alessandro; Vieira, Manuela; Sanguino, P.; Carvalho, C. N.; Muschik, T.We discuss the operation of a new type of optical sensor (MISCam) based on a metal-insulator-semiconductor (MIS) structure. The operation principle relies on light-induced changes of the band bending and barrier height at the interface between semiconductor and insulator. An image is obtained from the quenching of the ac signal in analogy to the principle of the laser-scanned photodiode (LSP). Lateral resolution depends on the semiconductor material chosen. We have characterised the MIS structures by C-V, I-V, and spectral response measurements testing different types of insulators like a-Si3N4, SiO2, and AlN. The presence of slow interface charges allows for image memory. Colour sensors can be realised by controlling sign and magnitude of the electric fields in the base and the interface region.
- Novel structure for large area image sensingPublication . Fernandes, Miguel; Vieira, Manuela; Martins, R.This work presents preliminary results in the study of a novel structure for a laser scanned photodiode (LSP) type of image sensor. In order to increase the signal output, a stacked p-i-n-p-i-n structure with an intermediate light-blocking layer is used. The image and the scanning beam are incident through opposite sides of the sensor and their absorption is kept in separate junctions by an intermediate light-blocking layer. As in the usual LSP structure the scanning beam-induced photocurrent is dependent on the local illumination conditions of the image. The main difference between the two structures arises from the fact that in this new structure the image and the scanner have different optical paths leading to an increase in the photocurrent when the scanning beam is incident on a region illuminated on the image side of the sensor, while a decreasing in the photocurrent was observed in the single junction LSP. The results show that the structure can be successfully used as an image sensor even though some optimization is needed to enhance the performance of the device.
- A non-pixel image reader for continuous image detection based on tandem heterostructuresPublication . Vieira, Manuela; Fernandes, Miguel; Fantoni, Alessandro; Louro, PaulaAn optically addressed read-write sensor based on two stacked p-i-n heterojunctions is analyzed. The device is a two terminal image sensing structure. The charge packets are injected optically into the p-i-n writer and confined at the illuminated regions changing locally the electrical field profile across the p-i-n reader. An optical scanner is used for charge readout. The design allows a continuous readout without the need for pixel-level patterning. The role of light pattern and scanner wavelengths on the readout parameters is analyzed. The optical-to-electrical transfer characteristics show high quantum efficiency, broad spectral response, and reciprocity between light and image signal. A numerical simulation supports the imaging process. A black and white image is acquired with a resolution around 20 mum showing the potentiality of these devices for imaging applications.