Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.21/1333
Título: A 3-phase model for VIS/NIR mu C-Si : H p-i-n detectors
Autor: Vieira, Maria Manuela Almeida Carvalho
Fantoni, Alessandro
Fernandes, Miguel
Maçarico, António Filipe Ruas da Trindade
Schwarz, R.
Palavras-chave: Photodetector
Mu c-p-i-n Devices
Spectral response
Collection efficiency
Data: 25-Ago-2000
Editora: Elsevier Science SA
Citação: Vieira M, Fantoni A, Fernandes M, Maçarico A, Schwarz R. A 3-phase model for VIS/NIR mu C-Si : H p-i-n detectors. Sensors and Actuators A-Physical. 2000; Volume 85, Issue 1-3, 175-180.
Relatório da Série N.º: 85
Resumo: The spectral response and the photocurrent delivered by entirely microcrystalline p-i-n-Si:H detectors an analysed under different applied bias and light illumination conditions. The spectral response and the internal collection depend not only on the energy range but also on the illumination side. Under [p]- and [n]-side irradiation, the internal collection characteristics have an atypical shape. It is high for applied bias and lower than the open circuit voltage, shows a steep decrease near the open circuit voltage (higher under [n]-side illumination) and levels off for higher voltages. Additionally, the numerical modeling of the VIS/NIR detector, based on the band discontinuities near the grain boundaries and interfaces, complements the study and gives insight into the internal physical process.
Peer review: yes
URI: http://hdl.handle.net/10400.21/1333
ISSN: 0924-4247
Aparece nas colecções:ISEL - Eng. Elect. Tel. Comp. - Artigos

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