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Applications for a-Si:H TFTs: modelling and simulation

2020Journal article Open access
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dc.contributor.authorLourenço, P.
dc.contributor.authorFantoni, Alessandro
dc.contributor.authorFernandes, M.
dc.contributor.authorCosta, J.
dc.contributor.authorVieira, Manuela
dc.date.accessioned2021-01-08T10:41:22Z
dc.date.available2021-01-08T10:41:22Z
dc.date.issued2020
dc.description.abstractHydrogenated amorphous silicon thin film transistors have been used as switching elements in liquid crystal displays and large area matrix addressed sensor arrays. Later, these devices have also been used as analogue active elements in organic light emitting diode displays. However, this technology suffers from bias induced meta-stability. This issue introduces both threshold voltage and subthreshold slope shifts over time when gate bias is applied. Such instabilities jeopardize long term performance of circuits that rely on these components. Nevertheless, hydrogenated amorphous silicon thin film transistors present an exponential transfer characteristic when operating on subthreshold region and their typical power consumption is under 1 µW. This low power characteristic makes these devices ideally suited for low power electronic design. This work demonstrates, through transient analysis of a wellestablished simulation model for hydrogenated amorphous silicon, the viability of thin film transistors technology to perform both analogue and digital functions. Hence, these structures may be used in both application fields. To this end, two different sets of analyses have been conducted with hydrogenated amorphous silicon based thin film transistors. The first set considers a driving circuit for an active matrix of organic light emitting diodes, biased in a way to minimize the “memory effect” (increasing shift on threshold voltage) due to long term operation. The second set of analyses were conducted upon the implementation of complementary output universal gates, namely NOR/OR and XNOR/XOR elements.pt_PT
dc.description.versioninfo:eu-repo/semantics/publishedVersionpt_PT
dc.identifier.citationLOURENÇO, P.; [et al] – Applications for a-Si:H TFTs: modelling and simulation. i-ETC: ISEL Academic Journal of Electronics, Telecommunications and Computers. ISSN 2182-4010. Vol. 6, N.º 1 (2020), pp. 1-10pt_PT
dc.identifier.issn2182-4010
dc.identifier.urihttp://hdl.handle.net/10400.21/12594
dc.language.isoengpt_PT
dc.peerreviewedyespt_PT
dc.publisherISEL - Instituto Superior de Engenharia de Lisboapt_PT
dc.relationSFRH/BD/144833/2019 - FCTpt_PT
dc.subjectThin film transistorspt_PT
dc.subjectHydrogenated amorphous siliconpt_PT
dc.subjectAMOLED driving circuitpt_PT
dc.subjectUniversal gatespt_PT
dc.titleApplications for a-Si:H TFTs: modelling and simulationpt_PT
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage10pt_PT
oaire.citation.issue1pt_PT
oaire.citation.startPage1pt_PT
oaire.citation.titlei-ETC: ISEL Academic Journal of Electronics, Telecommunications and Computerspt_PT
oaire.citation.volume6pt_PT
person.familyNameFantoni
person.familyNameVieira
person.givenNameAlessandro
person.givenNameManuela
person.identifier10792
person.identifier.ciencia-id241E-E87C-552F
person.identifier.ciencia-id9516-E25E-BB8E
person.identifier.orcid0000-0002-9938-0351
person.identifier.orcid0000-0002-1150-9895
person.identifier.ridK-1105-2016
person.identifier.ridV-7860-2017
person.identifier.scopus-author-id7006535604
person.identifier.scopus-author-id7202140173
rcaap.rightsopenAccesspt_PT
rcaap.typearticlept_PT
relation.isAuthorOfPublication9f35eb1e-83e4-4342-a86d-265604301499
relation.isAuthorOfPublicationb77c6785-9cfb-4cd4-90b5-c2b816bd7d11
relation.isAuthorOfPublication.latestForDiscoveryb77c6785-9cfb-4cd4-90b5-c2b816bd7d11

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