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Ion beam monitoring over a biased target

dc.contributor.authorLopes, J. Gabriel
dc.contributor.authorRocha, J.
dc.contributor.authorCatarino, N.
dc.contributor.authorPeres, M.
dc.date.accessioned2017-11-17T10:35:19Z
dc.date.available2017-11-17T10:35:19Z
dc.date.issued2017-10
dc.description.abstractA specially designed beam profile monitor (BPM) was produced to be assembled over a biased target plate, with the aim of studying the effect of an ion beam deceleration system on the beam fluence due to beam dispersion. The new BPM was developed with a shape as flat as possible, so it could be attached to a biased target plate without affecting the target geometry, using a slit scan method to produce an high-resolution beam profile. This system was designed and installed on the high current ion implanter at the Laboratorio de Aceleradores e Tecnologias de Radiacao, at the Campus Tecnologico e Nuclear, of Instituto Superior Tecnico, in Lisbon. The system is capable of showing the ion beam profile for low-energy ion beams below 15 keV, using a beam deceleration system.pt_PT
dc.description.versioninfo:eu-repo/semantics/publishedVersionpt_PT
dc.identifier.citationLOPES, J. Gabriel [et al] - Ion Beam Monitoring Over a Biased Target. IEEE Transactions On Plasma Science. ISSN 0093-3813. Vol. 45, N.º 10, Part 1 (2017), pp. 2767-2772pt_PT
dc.identifier.doi10.1109/TPS.2017.2735918pt_PT
dc.identifier.issn0093-3813
dc.identifier.issn1939-9375
dc.identifier.urihttp://hdl.handle.net/10400.21/7538
dc.language.isoengpt_PT
dc.peerreviewedyespt_PT
dc.publisherIEEE-Inst Electrical Electronics Engineers Incpt_PT
dc.relationEngenharia de defeitos e funcionalização de semicondutores de largo hiato energético
dc.relation.publisherversionhttp://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=8006309pt_PT
dc.subjectBeam profilept_PT
dc.subjectHigh energypt_PT
dc.subjectHigh resolutionpt_PT
dc.subjectIon beampt_PT
dc.subjectLow energypt_PT
dc.titleIon beam monitoring over a biased targetpt_PT
dc.typeconference object
dspace.entity.typePublication
oaire.awardTitleEngenharia de defeitos e funcionalização de semicondutores de largo hiato energético
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/OE/SFRH%2FBPD%2F111285%2F2015/PT
oaire.citation.conferencePlaceEstoril Portugal, 18-22 de setembro2016pt_PT
oaire.citation.endPage2772pt_PT
oaire.citation.issue10pt_PT
oaire.citation.startPage2767pt_PT
oaire.citation.titleJoint Conference of the 6th Euro-Asian Pulsed Power Conference (EAPPC) / 21st International Conference on High-Power Particle Beams (BEAMS) / 15th International Conference on Megagauss Magnetic Field Generation and Related Topics (MEGAGAUSS)pt_PT
oaire.citation.volume45pt_PT
oaire.fundingStreamOE
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.nameFundação para a Ciência e a Tecnologia
rcaap.rightsclosedAccesspt_PT
rcaap.typeconferenceObjectpt_PT
relation.isProjectOfPublicatione009d382-822b-4784-9e60-116cab6ca740
relation.isProjectOfPublication.latestForDiscoverye009d382-822b-4784-9e60-116cab6ca740

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