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DEMUX devices based on a-SiC:H

2012-10Journal article Restricted access
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dc.contributor.authorFantoni, Alessandro
dc.contributor.authorLouro, Paula
dc.contributor.authorVieira, Manuel Augusto
dc.contributor.authorSilva, T.
dc.contributor.authorVieira, Manuela
dc.date.accessioned2015-09-07T13:20:08Z
dc.date.available2015-09-07T13:20:08Z
dc.date.issued2012-10
dc.description.abstractIn this paper we present results about the functioning of a multilayered a-SiC:H heterostructure as a device for wavelength-division demultiplexing of optical signals. The device is composed of two stacked p-i-n photodiodes, both optimized for the selective collection of photogenerated carriers. Band gap engineering was used to adjust the photogeneration and recombination rates profiles of the intrinsic absorber regions of each photodiode to short and long wavelength absorption and carrier collection in the visible spectrum. The photocurrent signal using different input optical channels was analyzed at reverse and forward bias and under steady state illumination. This photocurrent is used as an input for a demux algorithm based on the voltage controlled sensitivity of the device. The device functioning is explained with results obtained by numerical simulation of the device, which permit an insight to the internal electric configuration of the double heterojunction.These results address the explanation of the device functioning in the frequency domain to a wavelength tunable photocapacitance due to the accumulation of space charge localized at the internal junction. The existence of a direct relation between the experimentally observed capacitive effects of the double diode and the quality of the semiconductor materials used to form the internal junction is highlighted.por
dc.identifier.citationFANTONI, Alessandro; [et al] – Demux devices based on A-SiC:H. Sensors and Actuators A: Physical. ISSN 0924-4247. Vol. 186 (2012), pp. 143-147.por
dc.identifier.doi10.1016/j.sna.2012.05.020
dc.identifier.issn0924-4247
dc.identifier.urihttp://hdl.handle.net/10400.21/5079
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherElsevier Science SApor
dc.relation.publisherversionhttps://www.sciencedirect.com/science/article/pii/S092442471200297X
dc.subjectAmorphous siliconpor
dc.subjectNumerical Simulationpor
dc.subjectWavelength division multiplexing (WDM)por
dc.subjectLight-semiconductor interactionpor
dc.titleDEMUX devices based on a-SiC:H
dc.typejournal article
dspace.entity.typePublication
oaire.citation.conferencePlaceLausanne
oaire.citation.endPage147por
oaire.citation.startPage143por
oaire.citation.titleSensors and Actuators A: Physicalpor
oaire.citation.volume186por
person.familyNameFantoni
person.familyNameLouro
person.familyNameAugusto Vieira
person.familyNameVieira
person.givenNameAlessandro
person.givenNamePaula
person.givenNameManuel
person.givenNameManuela
person.identifier499161
person.identifierI-8527-2018
person.identifier10792
person.identifier.ciencia-id241E-E87C-552F
person.identifier.ciencia-idE511-8C08-E606
person.identifier.ciencia-idA511-1330-549F
person.identifier.ciencia-id9516-E25E-BB8E
person.identifier.orcid0000-0002-9938-0351
person.identifier.orcid0000-0002-4167-2052
person.identifier.orcid0000-0003-1385-3646
person.identifier.orcid0000-0002-1150-9895
person.identifier.ridK-1105-2016
person.identifier.ridU-8346-2017
person.identifier.ridV-7860-2017
person.identifier.scopus-author-id7006535604
person.identifier.scopus-author-id8845716400
person.identifier.scopus-author-id5719 1567905
person.identifier.scopus-author-id7202140173
rcaap.rightsclosedAccesspor
rcaap.typearticlepor
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