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Sub-micron structuring of silicon using femtosecond laser interferometry

2013-12-30Journal article Open access
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dc.contributor.authorOliveira, Vitor
dc.contributor.authorVilar, Rui
dc.contributor.authorSerra, R.
dc.contributor.authorOliveira, J. C.
dc.contributor.authorPolushkin, N. I.
dc.contributor.authorConde, O.
dc.date.accessioned2013-11-12T18:27:54Z
dc.date.available2013-11-12T18:27:54Z
dc.date.issued2013-12-30
dc.description.abstractWe report the fabrication of planar sub-micron gratings in silicon with a period of 720 nm using a modified Michelson interferometer and femtosecond laser radiation. The gratings consist of alternated stripes of laser ablated and unmodified material. Ablated stripes are bordered by parallel ridges which protrude above the unmodified material. In the regions where ridges are formed, the laser radiation intensity is not sufficient to cause ablation. Nevertheless, melting and a significant temperature increase are expected, and ridges may be formed due to expansion of silicon during resolidification or silicon oxidation. These conclusions are consistent with the evolution of the stripes morphology as a function of the distance from the center of the grating. (C) 2013 Elsevier Ltd. All rights reserved.por
dc.identifier.citationOLIVEIRA, V.; VILAR, R.; SERRA, R.; OLIVEIRA, J. C.; POLUSHKIN, N. I.; CONDE, O. - Sub-micron structuring of silicon using femtosecond laser interferometry. Optics and Laser Technology. ISSN 0030-3992. Vol. 54 (2013), p. 428-431.por
dc.identifier.issn0030-3992
dc.identifier.other10.1016/j.optlastec.2013.06.031
dc.identifier.urihttp://hdl.handle.net/10400.21/2904
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherElsevier SCI LTDpor
dc.subjectSilicon patterningpor
dc.subjectFemtosecond laserpor
dc.subjectMichelson interferometerpor
dc.subjectFabricatonpor
dc.subjectAblationpor
dc.subjectPulsespor
dc.subjectSipor
dc.subjectInterferencepor
dc.subjectSurfacespor
dc.subjectGratingspor
dc.subjectLithographypor
dc.subjectSolidspor
dc.subjectArrayspor
dc.titleSub-micron structuring of silicon using femtosecond laser interferometrypor
dc.typejournal article
dspace.entity.typePublication
oaire.citation.conferencePlaceOxonpor
oaire.citation.endPage431por
oaire.citation.startPage428por
oaire.citation.titleOptics and Laser Technologypor
oaire.citation.volume54por
person.familyNameOliveira
person.givenNameVitor
person.identifier.ciencia-idDA1C-25BD-5974
person.identifier.orcid0000-0002-1757-4524
person.identifier.ridA-3058-2009
person.identifier.scopus-author-id7006105706
rcaap.rightsrestrictedAccesspor
rcaap.typearticlepor
relation.isAuthorOfPublication269ff9af-427f-4d1d-949c-cd77cd386e9f
relation.isAuthorOfPublication.latestForDiscovery269ff9af-427f-4d1d-949c-cd77cd386e9f

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