Repository logo
 
Publication

Optoelectronic properties of a-Si(1-x)C(x)H films grown in hydrogen diluted silane-methane plasma

2010Conference object Open access
Simple item page
dc.contributor.authorVygranenko, Yuri
dc.contributor.authorFernandes, Miguel
dc.contributor.authorLouro, Paula
dc.contributor.authorVieira, Manuela
dc.contributor.authorSazonov, Andrei
dc.date.accessioned2013-11-14T18:20:19Z
dc.date.available2013-11-14T18:20:19Z
dc.date.issued2010
dc.description.abstractThis work reports on the optoelectronic properties and device application of hydrogenated amorphous silicon carbide (a-Si(1-x)C(x):H) films grown by plasma-enhanced chemical vapour deposition (PECVD). The films with an optical bandgap ranging from about 1.8 to 2.0 eV were deposited in hydrogen diluted silane-methane plasma by varying the radio frequency power. Several n-i-p structures with an intrinsic a-Si(1-x)C(x):H layer of different optical gaps were also fabricated. The optimized devices exhibited a diode ideality factor of 1.4-1.8, and a leakage current of 190-470 pA/cm(2) at -5 V. The density of deep defect states in a-Si(1-x)C(x):H was estimated from the transient dark current measurements and correlated with the optical bandgap and carbon content. Urbach energies for the valence band tail were also determined by analyzing the spectral response within sub-bandgap energy range. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimpor
dc.identifier.citationVYGRANENKO, Yuri; FERNANDES, Miguel; LOURO, Paula; VIEIRA, Manuela; SAZONOV, Andrei - Optoelectronic properties of a-Si(1-x)C(x)H films grown in hydrogen diluted silane-methane plasma. Physica Status Solidi C – Current Topics in Solid State Physics. ISSN 1610-1634. Vol. 7, nr. 3-4 (2010), p. 782-785.por
dc.identifier.issn1610-1634
dc.identifier.other10.1002/pssc.200982702
dc.identifier.urihttp://hdl.handle.net/10400.21/2924
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherWiley-V C H Verlag GMBHpor
dc.relation.publisherversionhttp://onlinelibrary.wiley.com/doi/10.1002/pssc.200982779/abstractpor
dc.subjectSilicon-carbon alloyspor
dc.subjectA-sich filmspor
dc.subjectH filmspor
dc.titleOptoelectronic properties of a-Si(1-x)C(x)H films grown in hydrogen diluted silane-methane plasmapor
dc.typeconference object
dspace.entity.typePublication
oaire.citation.conferencePlaceWeinheimpor
oaire.citation.endPage785por
oaire.citation.issue3-4por
oaire.citation.startPage782por
oaire.citation.titlePhysica Status Solidi C – Current Topics in Solid State Physicspor
oaire.citation.volume7por
person.familyNameVygranenko
person.familyNameFernandes
person.familyNameLouro
person.familyNameVieira
person.givenNameYuri
person.givenNameMiguel
person.givenNamePaula
person.givenNameManuela
person.identifier499161
person.identifier10792
person.identifier.ciencia-id121C-05B4-3897
person.identifier.ciencia-idDD1B-859F-EB0B
person.identifier.ciencia-idE511-8C08-E606
person.identifier.ciencia-id9516-E25E-BB8E
person.identifier.orcid0000-0002-1819-5606
person.identifier.orcid0000-0002-0765-474X
person.identifier.orcid0000-0002-4167-2052
person.identifier.orcid0000-0002-1150-9895
person.identifier.ridU-8346-2017
person.identifier.ridV-7860-2017
person.identifier.scopus-author-id6701808217
person.identifier.scopus-author-id24450183800
person.identifier.scopus-author-id8845716400
person.identifier.scopus-author-id7202140173
rcaap.rightsrestrictedAccesspor
rcaap.typeconferenceObjectpor
relation.isAuthorOfPublication5471872c-b778-4218-9ac1-677868dd7d43
relation.isAuthorOfPublication6a72ab08-83fa-4225-be0e-b827f206a82e
relation.isAuthorOfPublication730dc3dd-73eb-428d-b3a6-430085e33585
relation.isAuthorOfPublicationb77c6785-9cfb-4cd4-90b5-c2b816bd7d11
relation.isAuthorOfPublication.latestForDiscoveryb77c6785-9cfb-4cd4-90b5-c2b816bd7d11

Files

Original bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
Optoelectronic properties.rep.pdf
Size:
203.75 KB
Format:
Adobe Portable Document Format
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

ISEL - Eng. Elect. Tel. Comp. - Artigos