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InOx thin films deposited by plasma assisted evaporation: application in light shutters

2014-09Journal article Restricted access
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dc.contributor.authorMerino, E. G.
dc.contributor.authorAlmeida, Pedro L.
dc.contributor.authorCarvalho, Carlos Nunes de
dc.contributor.authorBrogueira, P.
dc.contributor.authorAmaral, A.
dc.contributor.authorLavareda, Guilherme
dc.date.accessioned2015-08-25T10:16:11Z
dc.date.available2015-08-25T10:16:11Z
dc.date.issued2014-09
dc.description.abstractAn integration of undoped InOx and commercial ITO thin films into laboratory assembled light shutter devices is made. Accordingly, undoped transparent conductive InOx thin films, about 100 nm thick, are deposited by radiofrequency plasma enhanced reactive thermal evaporation (rf-PERTE) of indium teardrops with no intentional heating of the glass substrates. The process of deposition occurs at very low deposition rates (0.1-0.3 nm/s) to establish an optimized reaction between the oxygen plasma and the metal vapor. These films show the following main characteristics: transparency of 87% (wavelength, lambda = 632.8 nm) and sheet resistance of 52 Omega/sq; while on commercial ITO films the transparency was of 92% and sheet resistance of 83 Omega/sq. The InOx thin film surface characterized by AFM shows a uniform grain texture with a root mean square surface roughness of Rq similar to 2.276 nm. In contrast, commercial ITO topography is characterized by two regions: one smoother with Rq similar to 0.973 nm and one with big grains (Rq similar to 3.617 nm). For the shutters assembled using commercial ITO, the light transmission coefficient (Tr) reaches the highest value (Tr-max) of 89% and the lowest (Tr-min) of 1.3% [13], while for the InOx shutters these values are 80.1% and 3.2%, respectively. Regarding the electric field required to achieve 90% of the maximum transmission in the ON state (E-on), the one presented by the devices assembled with commercial ITO coated glasses is 2.41 V/mu m while the one presented by the devices assembled with InOx coated glasses is smaller, 1.77 V/mu m. These results corroborate the device quality that depends on the base materials and fabrication process used. (C) 2014 Elsevier Ltd. All rights reserved.por
dc.identifier.citationMERINO, E. G.; [et al] – InOx thin films deposited by plasma assisted evaporation: Application in light shutters. Vacuum. ISSN: 0042-207X. Vol. 107 (2014), pp. 116-119por
dc.identifier.doi10.1016/j.vacuum.2014.04.011
dc.identifier.issn0042-207X
dc.identifier.urihttp://hdl.handle.net/10400.21/4978
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherPergamon-Elsevier Science LTDpor
dc.subjectInOxpor
dc.subjectrf-PERTEpor
dc.subjectRoom Temperaturepor
dc.subjectTCOpor
dc.subjectLiquid Crystalspor
dc.subjectElectro-Optical Devicespor
dc.titleInOx thin films deposited by plasma assisted evaporation: application in light shutterspor
dc.typejournal article
dspace.entity.typePublication
oaire.citation.conferencePlaceOxfordpor
oaire.citation.endPage119por
oaire.citation.startPage116por
oaire.citation.titleVacuumpor
oaire.citation.volume107por
person.familyNameMarques de Almeida
person.familyNameLavareda
person.givenNamePedro
person.givenNameGuilherme
person.identifier.ciencia-id0218-71B2-2DE0
person.identifier.orcid0000-0001-7356-8455
person.identifier.orcid0000-0002-9840-6329
person.identifier.ridB-4356-2009
person.identifier.scopus-author-id57190384213
person.identifier.scopus-author-id7003726431
rcaap.rightsclosedAccesspor
rcaap.typearticlepor
relation.isAuthorOfPublication429b6d71-328e-42b3-8151-15493de249b8
relation.isAuthorOfPublication281e9b00-b144-4007-a8c7-46582f497767
relation.isAuthorOfPublication.latestForDiscovery429b6d71-328e-42b3-8151-15493de249b8

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