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Field effect and light-assisted a-Si:H sensors for detection of ions in solution

dc.contributor.authorCosta, João
dc.contributor.authorFernandes, Miguel
dc.contributor.authorVieira, Manuela
dc.contributor.authorLavareda, G.
dc.contributor.authorCarvalho, Carlos N.
dc.contributor.authorKarmali, Amin
dc.date.accessioned2011-11-24T18:17:02Z
dc.date.available2011-11-24T18:17:02Z
dc.date.issued2010-06
dc.description.abstractIn this paper we present an amorphous silicon device that can be used in two operation modes to measure the concentration of ions in solution. While crystalline devices present a higher sensitivity, their amorphous counterpart present a much lower fabrication cost, thus enabling the production of cheap disposable sensors for use, for example, in the food industry. The devices were fabricated on glass substrates by the PECVD technique in the top gate configuration, where the metallic gate is replaced by an electrolytic solution with an immersed Ag/AgCl reference electrode. Silicon nitride is used as gate dielectric enhancing the sensitivity and passivation layer used to avoid leakage and electrochemical reactions. In this article we report on the semiconductor unit, showing that the device can be operated in a light-assisted mode, where changes in the pH produce changes on the measured ac photocurrent. In alternative the device can be operated as a conventional ion selective field effect device where changes in the pH induce changes in the transistor's threshold voltage.por
dc.identifier.citationCOSTA, J.; [et al] – Field effect and light-assisted a-Si:H sensors for detection of ions in solution. Sensor Letters. ISSN 1546-198X. Vol. 8, N.º 3 (2010), pp. 493-496.por
dc.identifier.issn1546-198X
dc.identifier.urihttp://hdl.handle.net/10400.21/567
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherAmerican Scientific Publisherspor
dc.subjectAmorphous siliconpor
dc.subjectLAPSpor
dc.subjectISFETpor
dc.titleField effect and light-assisted a-Si:H sensors for detection of ions in solutionpor
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage496por
oaire.citation.issue3
oaire.citation.startPage493por
oaire.citation.titleSensor Letterspor
oaire.citation.volume8
person.familyNameFernandes
person.familyNameVieira
person.familyNameKarmali
person.givenNameMiguel
person.givenNameManuela
person.givenNameAmin
person.identifier10792
person.identifier.ciencia-idDD1B-859F-EB0B
person.identifier.ciencia-id9516-E25E-BB8E
person.identifier.orcid0000-0002-0765-474X
person.identifier.orcid0000-0002-1150-9895
person.identifier.orcid0000-0003-0419-401X
person.identifier.ridV-7860-2017
person.identifier.ridE-4787-2011
person.identifier.scopus-author-id24450183800
person.identifier.scopus-author-id7202140173
person.identifier.scopus-author-id6603778216
rcaap.rightsrestrictedAccesspor
rcaap.typearticlepor
relation.isAuthorOfPublication6a72ab08-83fa-4225-be0e-b827f206a82e
relation.isAuthorOfPublicationb77c6785-9cfb-4cd4-90b5-c2b816bd7d11
relation.isAuthorOfPublication23975b4b-3234-4139-9675-89ea6f9a2332
relation.isAuthorOfPublication.latestForDiscoveryb77c6785-9cfb-4cd4-90b5-c2b816bd7d11

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