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Non-linear optical spontaneous photoluminescence emission enhancement effect in wide gap gallium nitride thin films

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dc.contributor.authorNiehus, Manfred
dc.contributor.authorSchwarz, Reinhard
dc.date.accessioned2018-08-29T10:18:38Z
dc.date.available2018-08-29T10:18:38Z
dc.date.issued2005
dc.description.abstractWith two interfering pulses from the 4th harmonic of a Nd-YAG laser we burnt a periodic lattice structure into the surface of GaN thin films. The lattice period of this permanent grating could be controlled between less than one and several tens of microns. Above the decomposition threshold, nitrogen evades from the sample surface, and the residual metallic gallium accumulates in the form of tiny droplets at the surfaces. The patterned structure shows structural similarities with microcavities. The question arises if the residual metallic gallium may act as a partially reflecting mirror. To test this hypothesis, we studied the steady-state and transient photoluminescence through the modulation of light emerging from the ubiquitous broad “yellow” photoluminescence band. The microlattice shows up by energy-equidistant spontaneous emission enhancement peaks in the steady-state photoluminescence spectra. We suggest that the partial reflection due to the residual metallic gallium leads to the observed enhancement effect.pt_PT
dc.description.versioninfo:eu-repo/semantics/publishedVersionpt_PT
dc.identifier.citationNIEHUS, Manfred; SCHWARZ, Reinhard – Non-linear optical spontaneous photoluminescence emission enhancement effect in wide gap gallium nitride thin films. In JETC05 – Jornadas de Engenharia de Eletrónica e Telecomunicações e de Computadores. Lisboa, Portugal: ISEL – Instituto Superior de Engenharia de Lisboa, 2005. Pp. 1-6pt_PT
dc.identifier.urihttp://hdl.handle.net/10400.21/8801
dc.language.isoengpt_PT
dc.publisherISEL - Instituto Superior de Engenharia de Lisboapt_PT
dc.subjectThin filmspt_PT
dc.subjectPhotoluminescencept_PT
dc.subjectSpontaneous emissionpt_PT
dc.titleNon-linear optical spontaneous photoluminescence emission enhancement effect in wide gap gallium nitride thin filmspt_PT
dc.typeconference object
dspace.entity.typePublication
oaire.citation.endPage6pt_PT
oaire.citation.startPage1pt_PT
person.familyNameNiehus
person.familyNameSchwarz
person.givenNameManfred
person.givenNameReinhard
person.identifier2230920
person.identifier.ciencia-id7710-9CEC-5CF3
person.identifier.ciencia-id501C-A71A-1F90
person.identifier.orcid0000-0002-0344-5115
person.identifier.orcid0000-0002-5926-1884
person.identifier.ridA-3318-2012
person.identifier.ridA-4903-2013
person.identifier.scopus-author-id6601980850
person.identifier.scopus-author-id7401845614
rcaap.rightsopenAccesspt_PT
rcaap.typeconferenceObjectpt_PT
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relation.isAuthorOfPublication8df67268-e873-4be5-bdb8-a84e1bf13b6c
relation.isAuthorOfPublication.latestForDiscoveryaaa3ffef-fb6e-4881-b9ce-b85eb6943a8d

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