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Advisor(s)
Abstract(s)
This paper reports on device-quality silicon-carbon alloy (a-SiC:H) application as an absorber material in semi-transparent solar cells. Films with an optical bandgap ranging from 2 to 2.3 eV were prepared by plasma enhanced chemical vapour deposition (PECVD). The n-i-p structures with undoped SiC:H layers deposited under the same experimental conditions were also fabricated and characterized. The optimized devices showed forward current-voltage characteristics with a diode ideality factor in the range from 1.4 to 1.8, and an open circuit voltage up to 0.92 V. The density of deep defect states in a SiC:H was estimated from the transient current measurements and correlated with the optical bandgap.
Description
Keywords
Amorhous silicon-carbon alloy Thin-film solar cells Density of states Células solares de película fina Densidade de estados
Citation
VYGRANENKO, Yuri; [et al] – Preparation and characterization of a-SiC:H absorber layer for semi-transparent solar cells. Energy Procedia (Proceeding of the EMRS Spring Meeting / Symposium C on Advanced Inorganic Materials and Structures for Photovoltaics). ISSN 1876-6102. Vol. 84 (2015), pp. 56-61
Publisher
Elsevier