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a-SiH p-i-n structures with extreme i-layer thickness

2009-10-01Conference object Restricted access
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dc.contributor.authorFantoni, Alessandro
dc.contributor.authorFernandes, Miguel
dc.contributor.authorVieira, Manuela
dc.contributor.authorCasteleiro, C.
dc.contributor.authorSchwarz, R.
dc.date.accessioned2013-11-28T16:41:04Z
dc.date.available2013-11-28T16:41:04Z
dc.date.issued2009-10-01
dc.description.abstractWe present measurements and numerical simulation of a-Si:H p-i-n detectors with a wide range of intrinsic layer thickness between 2 and 10 pm. Such a large active layer thickness is required in applications like elementary particle detectors or X-ray detectors. For large thickness and depending on the applied bias, we observe a sharp peak in the spectral response in the red region near 700 nm. Simulation results obtained with the program ASCA are in agreement with the measurement and permit the explanation of the experimental data. In thick samples holes recombine or are trapped before reaching the contacts, and the conduction mechanism is fully electron dominated. As a consequence, the peak position in the spectral response is located near the optical band gap of the a-Si:H i-layer. (C) 2009 Elsevier B.V. All rights reserved.por
dc.description.versionhttp://ac.els-cdn.com/S0040609009003393/1-s2.0-S0040609009003393-main.pdf?_tid=1048124c-577b-11e3-bf9f-00000aab0f27&acdnat=1385567361_28bd7b0c0165dd29d894b963fd4cbd15
dc.identifier.citationFANTONI, A.; [et al] – a SiH p-i-n structures with extreme i-layer thickness. Thin Solid Films. ISSN 0040-6090. Vol. 517, N.º 23 (2009), pp. 6426-6429.por
dc.identifier.doi10.1016/j.tsf.2009.02.073
dc.identifier.issn0040-6090
dc.identifier.other10.1016/j.tsf.2009.02.073
dc.identifier.urihttp://hdl.handle.net/10400.21/2966
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherElsevier Science SApor
dc.subjectAmorphous materialspor
dc.subjectSensorspor
dc.subjectElectrical properties and measurementspor
dc.subjectPhotoconductivitypor
dc.subjectNumerical simulationpor
dc.titlea-SiH p-i-n structures with extreme i-layer thicknesspor
dc.typeconference object
dspace.entity.typePublication
oaire.citation.conferencePlaceLausannepor
oaire.citation.endPage6429por
oaire.citation.issue23por
oaire.citation.startPage6426por
oaire.citation.titleThin Solid Filmspor
oaire.citation.volume517por
person.familyNameFantoni
person.familyNameFernandes
person.familyNameVieira
person.givenNameAlessandro
person.givenNameMiguel
person.givenNameManuela
person.identifier10792
person.identifier.ciencia-id241E-E87C-552F
person.identifier.ciencia-idDD1B-859F-EB0B
person.identifier.ciencia-id9516-E25E-BB8E
person.identifier.orcid0000-0002-9938-0351
person.identifier.orcid0000-0002-0765-474X
person.identifier.orcid0000-0002-1150-9895
person.identifier.ridK-1105-2016
person.identifier.ridV-7860-2017
person.identifier.scopus-author-id7006535604
person.identifier.scopus-author-id24450183800
person.identifier.scopus-author-id7202140173
rcaap.rightsrestrictedAccesspor
rcaap.typeconferenceObjectpor
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relation.isAuthorOfPublicationb77c6785-9cfb-4cd4-90b5-c2b816bd7d11
relation.isAuthorOfPublication.latestForDiscovery9f35eb1e-83e4-4342-a86d-265604301499

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