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New p-i-n Si : H imager configuration for spatial resolution improvement

dc.contributor.authorVieira, Manuela
dc.contributor.authorFernandes, Miguel
dc.contributor.authorMartins, João
dc.contributor.authorLouro, Paula
dc.contributor.authorMaçarico, António Filipe Ruas da Trindade
dc.contributor.authorSchwarz, Reinhard
dc.contributor.authorSchubert, Markus B.
dc.date.accessioned2012-03-23T11:53:41Z
dc.date.available2012-03-23T11:53:41Z
dc.date.issued2001-08-01
dc.description.abstractAmorphous glass/ZnO-Al/p(a-Si:H)/i(a-Si:H)/n(a-Si1-xCx:H)/Al imagers with different n-layer resistivities were produced by plasma enhanced chemical vapour deposition technique (PE-CVD). An image is projected onto the sensing element and leads to spatially confined depletion regions that can be readout by scanning the photodiode with a low-power modulated laser beam. The essence of the scheme is the analog readout, and the absence of semiconductor arrays or electrode potential manipulations to transfer the information coming from the transducer. The influence of the intensity of the optical image projected onto the sensor surface is correlated with the sensor output characteristics (sensitivity, linearity blooming, resolution and signal-to-noise ratio) are analysed for different material compositions (0.5 < x < 1). The results show that the responsivity and the spatial resolution are limited by the conductivity of the doped layers. An enhancement of one order of magnitude in the image intensity signal and on the spatial resolution are achieved at 0.2 mW cm(-2) light flux by decreasing the n-layer conductivity by the same amount. A physical model supported by electrical simulation gives insight into the image-sensing technique used.por
dc.identifier.citationVIEIRA, Manuela; [et al] – New p-i-n Si : H imager configuration for spatial resolution improvement. Sensors and Actuators A: Physical. ISSN 0924-4247. Vol. 92, N.º 1-3 (2001), pp. 60-66.por
dc.identifier.doi10.1016/S0924-4247(01)00540-4
dc.identifier.issn0924-4247
dc.identifier.urihttp://hdl.handle.net/10400.21/1347
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherElsevier Science SApor
dc.subjectSolid state transducerpor
dc.subjecta-Si : H p-i-n devicespor
dc.subjectOptical sensorspor
dc.subjectImagerpor
dc.subjectImage acquisition and representationpor
dc.subjectAnalog readoutpor
dc.titleNew p-i-n Si : H imager configuration for spatial resolution improvementpor
dc.typejournal article
dspace.entity.typePublication
oaire.citation.conferencePlaceLausannepor
oaire.citation.endPage66por
oaire.citation.issue1-3por
oaire.citation.startPage60por
oaire.citation.titleSensors and Actuators A: Physicalpor
oaire.citation.volume92
person.familyNameVieira
person.familyNameFernandes
person.familyNameLouro
person.familyNameRuas da Trindade Maçarico
person.givenNameManuela
person.givenNameMiguel
person.givenNamePaula
person.givenNameAntónio Filipe
person.identifier10792
person.identifier499161
person.identifier.ciencia-id9516-E25E-BB8E
person.identifier.ciencia-idDD1B-859F-EB0B
person.identifier.ciencia-idE511-8C08-E606
person.identifier.ciencia-idE018-BC2E-29CD
person.identifier.orcid0000-0002-1150-9895
person.identifier.orcid0000-0002-0765-474X
person.identifier.orcid0000-0002-4167-2052
person.identifier.orcid0000-0001-6213-925X
person.identifier.ridV-7860-2017
person.identifier.ridU-8346-2017
person.identifier.scopus-author-id7202140173
person.identifier.scopus-author-id24450183800
person.identifier.scopus-author-id8845716400
rcaap.rightsrestrictedAccesspor
rcaap.typearticlepor
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relation.isAuthorOfPublication6a72ab08-83fa-4225-be0e-b827f206a82e
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relation.isAuthorOfPublication07f6df58-ced5-4c88-b0de-03b9e8bef00e
relation.isAuthorOfPublication.latestForDiscovery07f6df58-ced5-4c88-b0de-03b9e8bef00e

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