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Etchability dependence of InOx and ITO thin films by plasma enhanced reactive termal evaporation on structural properties and deposition conditions

dc.contributor.authorAmaral, Ana
dc.contributor.authorLavareda, Guilherme
dc.contributor.authorCarvalho, Carlos Nunes de
dc.contributor.authorAndre, Vania
dc.contributor.authorVygranenko, Yuri
dc.contributor.authorFernandes, Miguel
dc.contributor.authorBrogueira, Pedro
dc.date.accessioned2018-08-29T09:40:15Z
dc.date.available2018-08-29T09:40:15Z
dc.date.issued2018-01-30
dc.description.abstractIndium oxide (InOx) and indium tin oxide (ITO) thin films were deposited on glass substrates by plasma enhanced reactive thermal evaporation (PERTE) at different substrate temperatures. The films were then submitted to two etching solutions with different chemical reactivity: i) HNO3 (6%), at room temperature; ii) HCl (35%): (40 °Be) FeCl3 (1:1), at 40 °C. The dependence of the etchability of the films on the structural and deposition conditions is discussed. Previously to etching, structural characterization was made. X-ray diffraction showed the appearance of a peak around 2θ=31° as the deposition temperature increases from room temperature to 190 °C, both for ITO and InOx. AFM surface topography and SEM micrographs of the deposited films are consistent with the structural properties suggested by X-ray spectra: as the deposition temperature increases, the surface changes from a finely grained structure to a material with a larger-sized grain or/and agglomerate structure of the order of 250-300 nm. The roughness Rq varies from 0.74 nm for the amorphous tissue to a maximum of 10.83 nm for the sample with the biggest crystalline grains. Raman spectra are also presented.pt_PT
dc.description.versioninfo:eu-repo/semantics/publishedVersionpt_PT
dc.identifier.citationAMARAL, Ana; [et al] – Etchability dependence of InOx and ITO thin films by plasma enhanced reactive termal evaporation on structural properties and deposition conditions. MRS Advances. ISSN 2059-8521. Vol. 3, N.º 4 (2018), pp. 207-212pt_PT
dc.identifier.doihttps://doi.org/10.1557/adv.2018.113pt_PT
dc.identifier.issn2059-8521
dc.identifier.urihttp://hdl.handle.net/10400.21/8800
dc.language.isoengpt_PT
dc.peerreviewedyespt_PT
dc.publisherCambridge University Presspt_PT
dc.relation.publisherversionhttps://www.cambridge.org/core/journals/mrs-advances/article/etchability-dependence-of-inox-and-ito-thin-films-by-plasma-enhanced-reactive-thermal-evaporation-on-structural-properties-and-deposition-conditions/D3546D6FB644C3A1E2CD4E4387A45E39pt_PT
dc.subjectTransparent conductorpt_PT
dc.subjectThin filmpt_PT
dc.subjectPlasma depositionpt_PT
dc.titleEtchability dependence of InOx and ITO thin films by plasma enhanced reactive termal evaporation on structural properties and deposition conditionspt_PT
dc.typejournal article
dspace.entity.typePublication
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/5876/UID%2FCTM%2F04540%2F2013/PT
oaire.citation.endPage212pt_PT
oaire.citation.issue4pt_PT
oaire.citation.startPage207pt_PT
oaire.citation.titleMRS Advancespt_PT
oaire.citation.volume3pt_PT
oaire.fundingStream5876
person.familyNameAmaral
person.familyNameLavareda
person.familyNamede Oliveira André
person.familyNameVygranenko
person.familyNameFernandes
person.familyNameFélix Brogueira
person.givenNameAna
person.givenNameGuilherme
person.givenNameVânia Mafalda
person.givenNameYuri
person.givenNameMiguel
person.givenNamePedro Miguel
person.identifierA-3006-2011
person.identifier.ciencia-id1315-E813-A6E9
person.identifier.ciencia-id5D11-03DB-AB4F
person.identifier.ciencia-id121C-05B4-3897
person.identifier.ciencia-idDD1B-859F-EB0B
person.identifier.ciencia-idE411-CFB9-E1F2
person.identifier.orcid0000-0001-8837-7547
person.identifier.orcid0000-0002-9840-6329
person.identifier.orcid0000-0001-5599-8355
person.identifier.orcid0000-0002-1819-5606
person.identifier.orcid0000-0002-0765-474X
person.identifier.orcid0000-0001-6069-4073
person.identifier.ridM-1915-2014
person.identifier.scopus-author-id7005934643
person.identifier.scopus-author-id7003726431
person.identifier.scopus-author-id22233327400
person.identifier.scopus-author-id6701808217
person.identifier.scopus-author-id24450183800
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.nameFundação para a Ciência e a Tecnologia
rcaap.rightsopenAccesspt_PT
rcaap.typearticlept_PT
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