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Bias-dependent photocurrent collection in p-i-n a-Si : H/SiC : H heterojunction

2002-04-01Journal article Open access
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dc.contributor.authorLouro, Paula
dc.contributor.authorVieira, Manuela
dc.contributor.authorVygranenko, Yuri
dc.contributor.authorFernandes, Miguel
dc.contributor.authorSchwarz, R.
dc.contributor.authorSchubert, M.
dc.date.accessioned2012-03-22T15:28:44Z
dc.date.available2012-03-22T15:28:44Z
dc.date.issued2002-04-01
dc.description.abstractA series of large area single layers and glass/ZnO:AVp(SixC1-x:H)/i(Si:H)/n(SixC1-x:H)/AI (0 < x < 1) heterojunction cells were produced by plasma-enhanced chemical vapour deposition (PE-CVD) at low temperature. Junction properties, carrier transport and photogeneration are investigated from dark and illuminated current-voltage (J-V) and capacitance-voltage (C-V) characteristics. For the heterojunction cells atypical J-V characteristics under different illumination conditions are observed leading to poor fill factors. High series resistances around 106 Q are also measured. These experimental results were used as a basis for the numerical simulation of the energy band diagram, and the electrical field distribution of the structures. Further comparison with the sensor performance gave satisfactory agreement. Results show that the conduction band offset is the most limiting parameter for the optimal collection of the photogenerated carriers. As the optical gap increases and the conductivity of the doped layers decreases, the transport mechanism changes from a drift to a diffusion-limited process.por
dc.identifier.citationLOURO, P.; [et al] – Bias dependent photocurrent collection in p-i-n a-Si : EVSiC : H heterojunction. Sensors and Actuators A: Physical. ISSN 0924-4247. Vol. 97-98 (2002), pp. 221-226.por
dc.identifier.doi10.1016/S0924-4247(01)00838-X
dc.identifier.issn0924-4247
dc.identifier.urihttp://hdl.handle.net/10400.21/1338
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherElsevier Science SApor
dc.subjectOptical biaspor
dc.subjectHeterostructurespor
dc.subjectOptoelectronic propertiespor
dc.subjectNumerical simulationpor
dc.titleBias-dependent photocurrent collection in p-i-n a-Si : H/SiC : H heterojunctionpor
dc.typejournal article
dspace.entity.typePublication
oaire.citation.conferencePlaceLausannepor
oaire.citation.endPage226por
oaire.citation.startPage221por
oaire.citation.titleSensors and Actuators A-Physicalpor
oaire.citation.volume97-98
person.familyNameLouro
person.familyNameVieira
person.familyNameVygranenko
person.familyNameFernandes
person.givenNamePaula
person.givenNameManuela
person.givenNameYuri
person.givenNameMiguel
person.identifier499161
person.identifier10792
person.identifier.ciencia-idE511-8C08-E606
person.identifier.ciencia-id9516-E25E-BB8E
person.identifier.ciencia-id121C-05B4-3897
person.identifier.ciencia-idDD1B-859F-EB0B
person.identifier.orcid0000-0002-4167-2052
person.identifier.orcid0000-0002-1150-9895
person.identifier.orcid0000-0002-1819-5606
person.identifier.orcid0000-0002-0765-474X
person.identifier.ridU-8346-2017
person.identifier.ridV-7860-2017
person.identifier.scopus-author-id8845716400
person.identifier.scopus-author-id7202140173
person.identifier.scopus-author-id6701808217
person.identifier.scopus-author-id24450183800
rcaap.rightsrestrictedAccesspor
rcaap.typearticlepor
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relation.isAuthorOfPublicationb77c6785-9cfb-4cd4-90b5-c2b816bd7d11
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relation.isAuthorOfPublication.latestForDiscoveryb77c6785-9cfb-4cd4-90b5-c2b816bd7d11

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