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Phase growth control in low temperature PLD Co: TiO2 films by pressure

2013-06Journal article Open access
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dc.contributor.authorRout, S.
dc.contributor.authorPopovici, N.
dc.contributor.authorDalui, S.
dc.contributor.authorParames, M. L.
dc.contributor.authorSilva, R. C. da
dc.contributor.authorSilvestre, António Jorge
dc.contributor.authorConde, O.
dc.date.accessioned2013-11-05T19:33:39Z
dc.date.available2013-11-05T19:33:39Z
dc.date.issued2013-06
dc.description.abstractThis paper reports on the structural and optical properties of Co-doped TiO2 thin films grown onto (0001)Al2O3 substrates by non-reactive pulsed laser deposition (PLD) using argon as buffer gas. It is shown that by keeping constant the substrate temperature at as low as 310 degrees C and varying only the background gas pressure between 7 Pa and 70 Pa, it is possible to grow either epitaxial rutile or pure anatase thin films, as well as films with a mixture of both polymorphs. The optical band gaps of the films are red shifted in comparison with the values usually reported for undoped TiO2, which is consistent with n-type doping of the TiO2 matrix. Such band gap red shift brings the absorption edge of the Co-doped TiO2 films into the visible region, which might favour their photocatalytic activity. Furthermore, the band gap red shift depends on the films' phase composition, increasing with the increase of the Urbach energy for increasing rutile content. (C) 2012 Elsevier B.V. All rights reserved.por
dc.identifier.citationROUT, S.; POPOVICI, N.; DALUI, S.; PARAMES, M. L.; SILVA, R. C. da; SILVESTRE, A. J.; CONDE, O. - Phase growth control in low temperature PLD Co: TiO2 films by pressure. Current Applied Physics. ISSN 1567-1739. Vol. 13, nr. 4 (2013), p. 670-676.por
dc.identifier.issn1567-1739
dc.identifier.other10.1016/j.cap.2012.11.005
dc.identifier.urihttp://hdl.handle.net/10400.21/2871
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherElsevier Science BVpor
dc.subjectCo-doped TiO2por
dc.subjectNon-reactive PLDpor
dc.subjectBackground pressurepor
dc.subjectRutilepor
dc.subjectAnatasepor
dc.subjectOptical band gappor
dc.subjectPulsed-laser depositionpor
dc.subjectThin-filmspor
dc.subjectOptical-propertiespor
dc.subjectPhotocatalytic activitypor
dc.subjectNanoparticlespor
dc.titlePhase growth control in low temperature PLD Co: TiO2 films by pressurepor
dc.typejournal article
dspace.entity.typePublication
oaire.citation.conferencePlaceAmsterdampor
oaire.citation.endPage676por
oaire.citation.issue4por
oaire.citation.startPage670por
oaire.citation.titleCurrent Applied Physicspor
oaire.citation.volume13por
person.familyNameSilvestre
person.givenNameAntónio Jorge
person.identifier.orcid0000-0001-6517-6275
person.identifier.scopus-author-id25224208600
rcaap.rightsrestrictedAccesspor
rcaap.typearticlepor
relation.isAuthorOfPublicationda27d795-d2eb-4f8c-bfa5-7053ef20f339
relation.isAuthorOfPublication.latestForDiscoveryda27d795-d2eb-4f8c-bfa5-7053ef20f339

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