Publication
Electrical transport properties of CuS single crystals
| dc.contributor.author | Casaca, A. | |
| dc.contributor.author | Lopes, E. B. | |
| dc.contributor.author | Goncalves, A. P. | |
| dc.contributor.author | Almeida, M. | |
| dc.date.accessioned | 2012-09-11T13:42:21Z | |
| dc.date.available | 2012-09-11T13:42:21Z | |
| dc.date.issued | 2012-01-11 | |
| dc.description.abstract | Electrical resistivity, transverse magnetoresistance and thermoelectric power measurements were performed on CuS high quality single crystals in the range 1.2-300 K and under fields of up to 16 T. The zero field resistivity data are well described below 55 K by a quasi-2D model, consistent with a carrier confinement at lower temperatures, before the transition to the superconducting state. The transverse magnetoresistance develops mainly below 30 K and attains values as large as 470% for a 16 T field at 5 K, this behaviour being ascribed to a band effect mechanism, with a possible magnetic field induced DOS change at the Fermi level. The transverse magnetoresistance shows no signs of saturation, following a power law with field Delta rho/rho(0) proportional to H(1.4), suggesting the existence of open orbits for carriers at the Fermi surface. The thermoelectric power shows an unusual temperature dependence, probably as a result of the complex band structure of CuS. | por |
| dc.identifier.citation | Casaca A, Lopes E B, Goncalves A P, Almeida M. Electrical transport properties of CuS single crystals. Journal of Physics-Condensed Matter. 2012: 24 (1). | por |
| dc.identifier.issn | 0953-8984 | |
| dc.identifier.uri | http://hdl.handle.net/10400.21/1767 | |
| dc.language.iso | eng | por |
| dc.peerreviewed | yes | por |
| dc.publisher | Iop Publishing LTD | por |
| dc.relation.ispartofseries | ;015701 | |
| dc.subject | Metal-Insulator-Transition | por |
| dc.subject | Copper Sulfide | por |
| dc.subject | Large Magnetoresistance | por |
| dc.subject | Thin-Films | por |
| dc.subject | Phase | por |
| dc.subject | Thermopower | por |
| dc.subject | Anisotropy | por |
| dc.subject | Growth | por |
| dc.title | Electrical transport properties of CuS single crystals | por |
| dc.type | journal article | |
| dspace.entity.type | Publication | |
| oaire.citation.conferencePlace | Bristol | por |
| oaire.citation.issue | 1 | por |
| oaire.citation.title | Journal of Physics-Condensed Matter | por |
| oaire.citation.volume | 24 | por |
| rcaap.rights | restrictedAccess | por |
| rcaap.type | article | por |
Files
Original bundle
1 - 1 of 1
No Thumbnail Available
- Name:
- Electrical transport properties of CuS single crystals.rep.pdf
- Size:
- 57.42 KB
- Format:
- Adobe Portable Document Format
License bundle
1 - 1 of 1
No Thumbnail Available
- Name:
- license.txt
- Size:
- 1.71 KB
- Format:
- Item-specific license agreed upon to submission
- Description: