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Photodiode with nanocrystalline Si/amorphous Si absorber bilayer

2011-10-07Journal article Open access
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dc.contributor.authorVygranenko, Yuri
dc.contributor.authorSazonov, A.
dc.contributor.authorFernandes, Miguel
dc.contributor.authorVieira, Manuela
dc.date.accessioned2013-02-16T17:13:23Z
dc.date.available2013-02-16T17:13:23Z
dc.date.issued2011-10-07
dc.description.abstractThis letter reports a near-ultraviolet/visible/near-infrared n(+)-n-i-delta(i)-p photodiode with an absorber comprising a nanocrystalline silicon n layer and a hydrogenated amorphous silicon i layer. Device modeling reveals that the dominant source of reverse dark current is deep defect states in the n layer, and its magnitude is controlled by the i layer thickness. The photodiode with the 900/400 nm thick n-i layers exhibits a reverse dark current density of 3nA/cm(2) at -1V. Donor concentration and diffusion length of holes in the n layer are estimated from the capacitance-voltage characteristics and from the bias dependence of long-wavelength response, respectively. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3660725]por
dc.identifier.citationVYGRANENKO, Y.; SAZONOV, A.; FERNANDES, M.; VIEIRA, M. - Photodiode with nanocrystalline Si/amorphous Si absorber bilayer. Applied Physics Letters. ISSN 0003-6951. Vol. 99, n.º 19 (2011).por
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/10400.21/2228
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherAmer Inst Physicspor
dc.relation.ispartofseries191111
dc.subjectMicrocrystalline siliconpor
dc.titlePhotodiode with nanocrystalline Si/amorphous Si absorber bilayerpor
dc.typejournal article
dspace.entity.typePublication
oaire.citation.conferencePlaceMelvillepor
oaire.citation.issue19por
oaire.citation.titleApplied Physics Letterspor
oaire.citation.volume99por
person.familyNameVygranenko
person.familyNameFernandes
person.familyNameVieira
person.givenNameYuri
person.givenNameMiguel
person.givenNameManuela
person.identifier10792
person.identifier.ciencia-id121C-05B4-3897
person.identifier.ciencia-idDD1B-859F-EB0B
person.identifier.ciencia-id9516-E25E-BB8E
person.identifier.orcid0000-0002-1819-5606
person.identifier.orcid0000-0002-0765-474X
person.identifier.orcid0000-0002-1150-9895
person.identifier.ridV-7860-2017
person.identifier.scopus-author-id6701808217
person.identifier.scopus-author-id24450183800
person.identifier.scopus-author-id7202140173
rcaap.rightsrestrictedAccesspor
rcaap.typearticlepor
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relation.isAuthorOfPublication6a72ab08-83fa-4225-be0e-b827f206a82e
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relation.isAuthorOfPublication.latestForDiscovery6a72ab08-83fa-4225-be0e-b827f206a82e

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