A 3-phase model for VIS/NIR mu C-Si : H p-i-n detectors

Vieira, Manuela; Fantoni, Alessandro; Fernandes, Miguel; Maçarico, António Filipe Ruas Trindade; Schwarz, R.

http://hdl.handle.net/10400.21/1333

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Authors

Vieira, Manuela

Fantoni, Alessandro

Fernandes, Miguel

Maçarico, António Filipe Ruas Trindade

Schwarz, R.

Abstract(s)

The spectral response and the photocurrent delivered by entirely microcrystalline p-i-n-Si:H detectors an analysed under different applied bias and light illumination conditions. The spectral response and the internal collection depend not only on the energy range but also on the illumination side. Under [p]- and [n]-side irradiation, the internal collection characteristics have an atypical shape. It is high for applied bias and lower than the open circuit voltage, shows a steep decrease near the open circuit voltage (higher under [n]-side illumination) and levels off for higher voltages. Additionally, the numerical modeling of the VIS/NIR detector, based on the band discontinuities near the grain boundaries and interfaces, complements the study and gives insight into the internal physical process.

Keywords

Photodetector Mu c-p-i-n devices Photocurrent Spectral response Collection efficiency Simulation

URI

http://hdl.handle.net/10400.21/1333

Citation

VIEIRA, M.; [et al] – A 3-phase model for VIS/NIR mu C-Si : H p-i-n detectors. Sensors and Actuators A: Physical. ISSN 0924-4247. Vol. 85, N.º 1-3 (2000), pp. 175-180.