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Transport properties in microcrystalline silicon solar cells under AM1.5 illumination analysed by two-dimensional numerical simulation

1999-09Journal article Restricted access
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dc.contributor.authorFantoni, Alessandro
dc.contributor.authorVieira, Manuela
dc.contributor.authorMartins, Rodrigo
dc.date.accessioned2012-03-23T15:33:44Z
dc.date.available2012-03-23T15:33:44Z
dc.date.issued1999-09
dc.description.abstractMicrocrystalline silicon is a two-phase material. Its composition can be interpreted as a series of grains of crystalline silicon imbedded in an amorphous silicon tissue, with a high concentration of dangling bonds in the transition regions. In this paper, results for the transport properties of a mu c-Si:H p-i-n junction obtained by means of two-dimensional numerical simulation are reported. The role played by the boundary regions between the crystalline grains and the amorphous matrix is taken into account and these regions are treated similar to a heterojunction interface. The device is analysed under AM1.5 illumination and the paper outlines the influence of the local electric field at the grain boundary transition regions on the internal electric configuration of the device and on the transport mechanism within the mu c-Si:H intrinsic layer.por
dc.identifier.citationFANTONI, Alessandro; VIEIRA, Manuela; MARTINS, Rodrigo – Transport properties in microcrystalline silicon solar cells under AM1.5 illumination analysed by two-dimensional numerical simulation. Solid-State Electronics. ISSN 0038-1101. Vol. 43, N.º 9 (1999), pp. 1709-1714.por
dc.identifier.doi10.1016/S0038-1101(99)00139-2
dc.identifier.issn0038-1101
dc.identifier.urihttp://hdl.handle.net/10400.21/1357
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherPergamon-Elsevier Science LTDpor
dc.subjectTransport propertiespor
dc.subjectMicrocrystalline silicon solar cellspor
dc.subjectAM1.5 illuminationpor
dc.subjectTwo-dimensional numerical simulationpor
dc.titleTransport properties in microcrystalline silicon solar cells under AM1.5 illumination analysed by two-dimensional numerical simulationpor
dc.typejournal article
dspace.entity.typePublication
oaire.citation.conferencePlaceOxfordpor
oaire.citation.endPage1714por
oaire.citation.issue9por
oaire.citation.startPage1709por
oaire.citation.titleSolid-State Electronicspor
oaire.citation.volume43
person.familyNameFantoni
person.familyNameVieira
person.givenNameAlessandro
person.givenNameManuela
person.identifier10792
person.identifier.ciencia-id241E-E87C-552F
person.identifier.ciencia-id9516-E25E-BB8E
person.identifier.orcid0000-0002-9938-0351
person.identifier.orcid0000-0002-1150-9895
person.identifier.ridK-1105-2016
person.identifier.ridV-7860-2017
person.identifier.scopus-author-id7006535604
person.identifier.scopus-author-id7202140173
rcaap.rightsrestrictedAccesspor
rcaap.typearticlepor
relation.isAuthorOfPublication9f35eb1e-83e4-4342-a86d-265604301499
relation.isAuthorOfPublicationb77c6785-9cfb-4cd4-90b5-c2b816bd7d11
relation.isAuthorOfPublication.latestForDiscoveryb77c6785-9cfb-4cd4-90b5-c2b816bd7d11

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