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Stacked photo-sensing devices based on SiC alloys A non-pixelled architecture for imagers and demultiplexing devices

2010-08-26Conference object Open access
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dc.contributor.authorVieira, Manuela
dc.contributor.authorLouro, Paula
dc.contributor.authorFernandes, Miguel
dc.contributor.authorFantoni, Alessandro
dc.contributor.authorVieira, Manuel Augusto
dc.contributor.authorCosta, João
dc.date.accessioned2012-03-23T15:20:59Z
dc.date.available2012-03-23T15:20:59Z
dc.date.issued2010-08-26
dc.description.abstractIn this review paper different designs based on stacked p-i'-n-p-i-n heterojunctions are presented and compared with the single p-i-n sensing structures. The imagers utilise self-field induced depletion layers for light detection and a modulated laser beam for sequential readout. The effect of the sensing element structure, cell configurations (single or tandem), and light source properties (intensity and wavelength) are correlated with the sensor output characteristics (light-to-dark sensivity, spatial resolution, linearity and S/N ratio). The readout frequency is optimized showing that scans speeds up to 104 lines per second can be achieved without degradation in the resolution. Multilayered p-i'-n-p-i-n heterostructures can also be used as wavelength-division multiplexing /demultiplexing devices in the visible range. Here the sensor element faces the modulated light from different input colour channels, each one with a specific wavelength and bit rate. By reading out the photocurrent at appropriated applied bias, the information is multiplexed or demultiplexed and can be transmitted or recovered again. Electrical models are present to support the sensing methodologies.por
dc.identifier.citationVIEIRA, M,; [et al] – Stacked photo-sensing devices based on SiC alloys a non-pixelled architecture for imagers and demultiplexing devices. In 2010 4th International Conference on Sensor Technologies and Applications (SENSORCOMM). Mestre, Italy: IEEE, 2008. ISBN 978-1-4244-7537-7. Pp. 61-67.por
dc.identifier.doi10.1109/SENSORCOMM.2010.16
dc.identifier.isbn978-1-4244-7537-7
dc.identifier.isbn978-1-4244-7538-4
dc.identifier.urihttp://hdl.handle.net/10400.21/1355
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherIEEEpor
dc.subjectOptical sensorspor
dc.subjectWavelength division multiplexing-demultiplexingpor
dc.subjectElectrical simulationpor
dc.subjectOptical communicationspor
dc.titleStacked photo-sensing devices based on SiC alloys A non-pixelled architecture for imagers and demultiplexing devicespor
dc.typeconference object
dspace.entity.typePublication
oaire.citation.conferencePlaceNew Yorkpor
oaire.citation.endPage67por
oaire.citation.startPage61por
oaire.citation.title2010 Fourth International Conference on Sensor Technologies and Applicationspor
person.familyNameVieira
person.familyNameLouro
person.familyNameFernandes
person.familyNameFantoni
person.familyNameAugusto Vieira
person.familyNameCosta
person.givenNameManuela
person.givenNamePaula
person.givenNameMiguel
person.givenNameAlessandro
person.givenNameManuel
person.givenNameJoão
person.identifier10792
person.identifier499161
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person.identifier.ciencia-idA511-1330-549F
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person.identifier.orcid0000-0002-1150-9895
person.identifier.orcid0000-0002-4167-2052
person.identifier.orcid0000-0002-0765-474X
person.identifier.orcid0000-0002-9938-0351
person.identifier.orcid0000-0003-1385-3646
person.identifier.orcid0000-0002-8058-3685
person.identifier.ridV-7860-2017
person.identifier.ridU-8346-2017
person.identifier.ridK-1105-2016
person.identifier.scopus-author-id7202140173
person.identifier.scopus-author-id8845716400
person.identifier.scopus-author-id24450183800
person.identifier.scopus-author-id7006535604
person.identifier.scopus-author-id5719 1567905
person.identifier.scopus-author-id35810047500
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