Engenharia de defeitos e funcionalização de semicondutores de largo hiato energético

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Ion beam monitoring over a biased target

Publication . Lopes, J. Gabriel; Rocha, J.; Catarino, N.; Peres, M.

A specially designed beam profile monitor (BPM) was produced to be assembled over a biased target plate, with the aim of studying the effect of an ion beam deceleration system on the beam fluence due to beam dispersion. The new BPM was developed with a shape as flat as possible, so it could be attached to a biased target plate without affecting the target geometry, using a slit scan method to produce an high-resolution beam profile. This system was designed and installed on the high current ion implanter at the Laboratorio de Aceleradores e Tecnologias de Radiacao, at the Campus Tecnologico e Nuclear, of Instituto Superior Tecnico, in Lisbon. The system is capable of showing the ion beam profile for low-energy ion beams below 15 keV, using a beam deceleration system.

2017-10Documento de conferência

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Entidade financiadora

Fundação para a Ciência e a Tecnologia

Programa de financiamento

OE

Número da atribuição

SFRH/BPD/111285/2015