Browsing by Author "Amaral, A."
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- An indium-oxide electrode with discontinuous Au layers for plasmonic devicesPublication . Vygranenko, Yuri; Lavareda, G.; André, V.; Brogueira, Pedro; Amaral, A.; Fernandes, M.; Fantoni, Alessandro; Vieira, ManuelaIn this contribution we report on a low cost plasmonic electrode for light-sensing applications. The electrode combines a conducting nonstoichiometric indium oxide (InOx) layer with an ultrathin (~5 nm) discontinuous Au layer. The InOx and Au layers were deposited on glass substrates by plasma enhanced reactive thermal evaporation and thermal evaporation, respectively. Several device configurations with one or two Au layer(s) sandwiched between InOx layers were fabricated and characterized. The morphological and structural properties of both Au and InOx layers were analyzed using AFM and XRD techniques. In particular, the effect of thermal annealing (673 K, 15 min) on the surface morphology of Au layers grown on bare glass and InOx-coated substrate was investigated. It has been also found that the oxide film grown above an underlying nanostructured Au layer is amorphous, while a reference InOx film on glass is nanocrystalline with a smooth surface. The electrical properties of InOx grown on the Au surface are worsened due to Au-induced structural disorder. The observed difference in transmission spectra of the glass/InOx/Au and glass/Au/InOx structures indicates the difference in the morphology of the metal layer. Thus, the optical and morphological properties of the InOx electrode can be varied in a wide range by incorporating several Au layers.
- Automated rf-PERTE system for room temperature deposition of TCO coatingsPublication . Fernandes, M.; Vygranenko, Y.; Vieira, M.; Lavareda, G.; Carvalho, C. Nunes de; Amaral, A.In this work we present a fully automated plasma-enhanced reactive thermal evaporation system (rf-PERTE) that can be used for the deposition of transparent metal oxide films without intentional heating of the substrate. The system and developed software enables the full control over critical deposition conditions such as mass flow of oxygen, process pressure, current flowing through crucible and rf-power. These parameters are automatically adjusted during the deposition thus keeping them in a narrow process window. This way, highly transparent and conductive coating can be deposited with a high degree of reproducibility of the optical and electrical characteristics. The resistivity of 9×10-4 Ω-cm and the peak transmittance of 90% in the visible spectral range were achieved for indium oxide films deposited on glass substrates. This technique is also suitable for the deposition of transparent conducting coatings in a wide range of plastic materials for flexible solar cells. In particular, we have successfully deposited indium oxide on PEN (polyethylene naphthalate) sheets with electrical and optical properties approaching the ones for films on glass.
- Electrical, optical and photoconductive properties of Sn-doped indium sulfofluoride thin filmsPublication . Vygranenko, Yuri; Fernandes, M.; Vieira, Manuela; Lavareda, G.; Carvalho, C. Nunes De; Brogueira, P.; Amaral, A.; Barradas, N. P.; Alves, E.This work reports on undoped and Sn-doped indium sulfofluoride thin-films deposited by radio-frequency plasma-enhanced reactive thermal evaporation. The deposition was performed evaporating pure indium or indium-tin alloy in SF6 plasma at substrate temperatures ranging from 373 to 423 K. Rutherford backscattering analysis and secondary-ion mass spectrometry were used to determine the chemical composition of the films. The film characterization includes electrical, optical, and photoconductivity measurements. The resistivity of undoped material varies in a wide range of 1 G Omega-cm to 2 T Omega-cm depending on deposition conditions. Sn doping leads to a decrease in the resistance down to 8 M Omega-cm. The films are highly transparent in the visible-infrared region due to an indirect bandgap of 2.7-3 eV. Moreover, the doped material is highly photosensitive in the blue -UV region. Photoconductivity kinetics under various excitation conditions was also studied. The synthesized material is a promising candidate for a buffer layer in chalcogenide-based solar cells.
- InOx thin films deposited by plasma assisted evaporation: application in light shuttersPublication . Merino, E. G.; Almeida, Pedro L.; Carvalho, Carlos Nunes de; Brogueira, P.; Amaral, A.; Lavareda, GuilhermeAn integration of undoped InOx and commercial ITO thin films into laboratory assembled light shutter devices is made. Accordingly, undoped transparent conductive InOx thin films, about 100 nm thick, are deposited by radiofrequency plasma enhanced reactive thermal evaporation (rf-PERTE) of indium teardrops with no intentional heating of the glass substrates. The process of deposition occurs at very low deposition rates (0.1-0.3 nm/s) to establish an optimized reaction between the oxygen plasma and the metal vapor. These films show the following main characteristics: transparency of 87% (wavelength, lambda = 632.8 nm) and sheet resistance of 52 Omega/sq; while on commercial ITO films the transparency was of 92% and sheet resistance of 83 Omega/sq. The InOx thin film surface characterized by AFM shows a uniform grain texture with a root mean square surface roughness of Rq similar to 2.276 nm. In contrast, commercial ITO topography is characterized by two regions: one smoother with Rq similar to 0.973 nm and one with big grains (Rq similar to 3.617 nm). For the shutters assembled using commercial ITO, the light transmission coefficient (Tr) reaches the highest value (Tr-max) of 89% and the lowest (Tr-min) of 1.3% [13], while for the InOx shutters these values are 80.1% and 3.2%, respectively. Regarding the electric field required to achieve 90% of the maximum transmission in the ON state (E-on), the one presented by the devices assembled with commercial ITO coated glasses is 2.41 V/mu m while the one presented by the devices assembled with InOx coated glasses is smaller, 1.77 V/mu m. These results corroborate the device quality that depends on the base materials and fabrication process used. (C) 2014 Elsevier Ltd. All rights reserved.
- Optical and photoconductive properties of indium sulfide fluoride thin filmsPublication . Vygranenko, Yuri; Vieira, Manuela; Lavareda, G.; Carvalho, C. Nunes de; Brogueira, Pedro; Amaral, A.; Pessoa Barradas, Nuno; Alves, E.This work reports on transparent semiconducting indium sulfide fluoride (ISF) thin-films exhibiting high sensitivity to ultraviolet radiation. The films were deposited on fused silica and silicon substrates using a radiofrequency plasma-enhanced reactive thermal evaporation system. The deposition was performed evaporating pure indium in SF6 plasma at a substrate temperature of 423 K. Rutherford backscattering measurements were used to determine the chemical composition of the films deposited on silicon substrates. The surface morphology was studied using scanning electron microscopy technique. The film characterization includes electrical, optical, and photoconductivity measurements. The synthesized compound is highly-resistive (similar to 700 M Omega-cm at 300 K) and exhibits an evident semiconducting behavior. The activation energy of 0.88 eV is deduced from the temperature dependence of electrical resistivity. The indirect band energy gap of 2.8 eV is determined from transmittance spectra of the ISF films. The photoconductivity band is centered at 345 nm wavelength. The photoconductivity spectrum also shows the Urbach tail with a characteristic energy of 166 meV. ISF is a promising candidate for a buffer layer in chalcogenide-based solar cells.