Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.21/3603
Título: Study of Annealed Indium Tin Oxide-Films prepared by RF Reactive Magnetron Sputtering
Autor: Meng, L. J.
Maçarico, António Filipe Ruas da Trindade
Martins, R.
Palavras-chave: Optical-Properties
Data: Jul-1995
Editora: Pergamon-Elsevier Science LTD
Citação: MENG, L. J.; MAÇARICO, A.; MARTINS, R. - Study of Annealed Indium Tin Oxide-Films prepared by RF Reactive Magnetron Sputtering. Vaccum. ISSN 0042-207X. Vol. 46, nr. 7 (1995), p. 673-680.
Resumo: Tin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). The post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. The resistivity of as deposited film is about 1.3 x 10(-1) Omega*cm and decreases down to 6.9 x 10(-3) Omega*cm as the annealing temperature is increased up to 500 degrees C. In addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping.
Peer review: yes
URI: http://hdl.handle.net/10400.21/3603
ISSN: 0042-207X
Versão do Editor: http://www.sciencedirect.com/science/article/pii/0042207X94001502
Aparece nas colecções:ISEL - Física - Artigos

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