Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.21/1337
Título: Bias dependent photocurrent collection in p-i-n a-Si : EVSiC : H heterojunction
Autor: Louro, Paula
Vieira, Maria Manuela Almeida Carvalho
Vygranenko, Yuri
Fernandes, M.
Schwarz, R.
Schubert, M.
Palavras-chave: Heterostructures
Optoelectronic properties
Numerical simulation
Data: 2001
Editora: Obermeier E.
Citação: Louro P, Vieira M, Vygranenko Y, Fernandes M. Schwarz R, Schubert M.Bias dependent photocurrent collection in p-i-n a-Si : EVSiC : H heterojunction. Tranducers'01: Eurosensors XV, Digest of Technical Papers. 2001; Vols 1 and 2 : 540-543.
Resumo: A series of large area single layers and heterojunction cells in the assembly glass/ZnO:Al/p (SixC1-x:H)/i (Si:H)/n (SixC1-x:H)/Al (0 <x <1) were produced by PE-CVD at low temperature. Junction properties, carrier transport and photogeneration are investigated from dark and illuminated current-voltage and capacitance-voltage characteristics. For the heterojunction cells S-shaped J-V characteristics under different illumination conditions are observed leading to poor fill factors. High serial resistances around 10(5)Ohm are also measured Simulated results confirm the experimental findings suggesting that the transport in dark depends almost exclusively on field-aided drift while under illumination it is dependent mainly on minority carriers the diffusion.
Peer review: yes
URI: http://hdl.handle.net/10400.21/1337
ISBN: 3-540-42150-5
Aparece nas colecções:ISEL - Eng. Elect. Tel. Comp. - Artigos

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