Vygranenko, YuriFernandes, M.Vieira, ManuelaLavareda, G.Carvalho, C. Nunes DeBrogueira, P.Amaral, A.Barradas, N. P.Alves, E.2021-01-052021-01-052021-01VYGRANENKO, Y.; [et al] – Electrical, optical and photoconductive properties of Sn-doped indium sulfofluoride thin films. Materials Science in Semiconductor Processing. ISSN 1369-8001. Vol. 121 (2021), pp. 1-51369-80011873-4081http://hdl.handle.net/10400.21/12547This work reports on undoped and Sn-doped indium sulfofluoride thin-films deposited by radio-frequency plasma-enhanced reactive thermal evaporation. The deposition was performed evaporating pure indium or indium-tin alloy in SF6 plasma at substrate temperatures ranging from 373 to 423 K. Rutherford backscattering analysis and secondary-ion mass spectrometry were used to determine the chemical composition of the films. The film characterization includes electrical, optical, and photoconductivity measurements. The resistivity of undoped material varies in a wide range of 1 G Omega-cm to 2 T Omega-cm depending on deposition conditions. Sn doping leads to a decrease in the resistance down to 8 M Omega-cm. The films are highly transparent in the visible-infrared region due to an indirect bandgap of 2.7-3 eV. Moreover, the doped material is highly photosensitive in the blue -UV region. Photoconductivity kinetics under various excitation conditions was also studied. The synthesized material is a promising candidate for a buffer layer in chalcogenide-based solar cells.engIndium sulfofluorideThin-filmsAmorphous semiconductorsOptical propertiesPhotoconductivityPhotovoltaicsjournal article10.1016/j.mssp.2020.105349