Canacsinh, HirenSilva, FernandoLuis Redondo2017-11-172017-11-172017-10CANACSINH, Hiren; SILVA, Fernando; REDONDO, Luís Manuel dos Santos - Fault tolerance capability and semiconductor's hold-off voltage of solid-state bipolar Marx modulators. IEEE Transactions on Plasma Science. ISSN 0093-3813. Vol. 45, N.º 10, Part 1 (2017), pp. 2661-26660093-38131939-9375http://hdl.handle.net/10400.21/7541Este trabalho foi financiado pelo Concurso Anual para Projetos de Investigação, Desenvolvimento, Inovação e Criação Antístia (IDI&CA) 2016 do Instituto Politécnico de Lisboa. Código de Referência: IPL/2016/MBOCDTI_ISELTwo solid-state bipolar Marx modulators are analyzed and compared regarding hold-off semiconductor voltages and open-fault tolerance capability. Normal and abnormal operating conditions are considered, such as switch synchronization mismatches, failures, and open faults. Ten-stage laboratory prototypes of two bipolar Marx modulators have been assembled using 1200-V insulated gate bipolar transistors and matching diodes, to operate at 500-V dc input voltage. Outputs are 4-kV bipolar pulses, 1% duty ratio, into resistive loads, and 1-kHz frequency. Lack of synchronization and open-fault tests confirm that only topologies with redundant switches can operate without semiconductors being subjected to double hold-off voltages while presenting current paths to clear faults.engFault tolerance and fault clearance capabilityPulsed power systemsSolid-state unipolar/bipolar Marx modulatorsStray capacitancesIPL/2016/MBOCDTI_ISELFault tolerance capability and semiconductor's hold-off voltage of solid-state bipolar Marx modulatorsconference object10.1109/TPS.2017.2720974